Molecular Dynamics Simulation on the Effect of Bonding Pressure on Thermal Bonding of Polymer Microfluidic Chip
Molecular Dynamics Simulation on the Effect of Bonding Pressure on Thermal Bonding of Polymer Microfluidic Chip
复制标题
键合压力对聚合物微流控芯片热键合影响的分子动力学模拟
DOI：
10.3390/polym11030557
复制
发表时间：
2019-03
期刊：
影响因子：
5
通讯作者：
Jiang Bingyan
中科院分区：
文献类型：
--
作者：
Zhou Mingyong;Xiong Xiang;Drummer Dietmar;Jiang Bingyan
热粘接技术是注射成型微流控芯片最常用的粘接方法。虽然键合机制仍存在争议，但分子动力学方法可以在大分子水平上深入了解键合过程。在本研究中，进行了PMMA基板和盖板热键合的MD模拟。研究了热键过程中的分子构型和密度分布。研究了键合压力对等效应变、连接能和扩散系数的影响。模拟了脱粘过程，分析了粘接强度和破坏机理。仿真结果表明，侵彻主要发生在界面附近。随着压力的增加，最终密度略有增加，但粘结界面仍未得到充分填充。由于界面处存在间隙，等效应变的增长速度比后期快。结合压力对连接能、扩散系数和应力-应变行为有明显影响。拉伸破坏发生在界面上，PMMA链在两层之间拉伸。势能的大部分变化与非键能的变化有关。在屈服应变下，界面处的低密度缺陷削弱了粘结片的抗拉强度。
Thermal bonding technology is the most commonly used approach in bonding injection-molded microfluidic chips. Although the bonding mechanism is still under debate, the molecular dynamics (MD) method can provide insight into the bonding process on a macromolecular level. In this study, MD simulations for thermal bonding of PMMA substrate and cover sheet were performed. The molecule configuration and density distribution during the thermal bonding process were studied. The effects of bonding pressure on the equivalent strain, joining energy and diffusion coefficient were investigated. The debonding process was simulated to analyze the bonding strength and failure mechanism. Simulation results show that penetration mainly takes place near the interface area. Although the final density increases slightly with increasing pressure, the bonding interface is still insufficiently filled. The equivalent strain grows faster than that in the later stage because of the gap at the interface. The bonding pressure shows clear effects on the joining energy, diffusion coefficient and stress–strain behavior. Tensile failure occurs at the interface, with PMMA chains stretched between two layers. The majority of the change in potential energy is correlated with the change in non-bonded energy. At yield strain, the low-density defect at the interface weakens the tensile strength of bonded chip.
登录
查看更多内容
影响因子：
1.3
作者：
Chu, C. -P.;Jiang, B. -Y.;Jiang, F. -Z.
通讯作者：
Jiang, F. -Z.
影响因子：
3.4
作者：
Song IH;Park T
通讯作者：
Park T
影响因子：
6.1
作者：
Xiao Wang;C. Liedert;R. Liedert;I. Papautsky
通讯作者：
Xiao Wang;C. Liedert;R. Liedert;I. Papautsky
影响因子：
4.6
作者：
Katsuyuki Yokomizo;Yoshihiro Banno;M. Kotaki
通讯作者：
Katsuyuki Yokomizo;Yoshihiro Banno;M. Kotaki
DOI：
10.1088/0965-0393/17/1/015002
发表时间：
2009-01-01
影响因子：
1.8
作者：
Awasthi, Amnaya P.;Lagoudas, Dimitris C.;Hammerand, Daniel C.
通讯作者：
Hammerand, Daniel C.