Characterization of a-plane orientation ZnO film grown on GaN/Sapphire template by pulsed laser deposition
Characterization of a-plane orientation ZnO film grown on GaN/Sapphire template by pulsed laser deposition
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通过脉冲激光沉积在 GaN/蓝宝石模板上生长 a 面取向 ZnO 薄膜的表征
DOI：
10.1016/j.apsusc.2010.02.072
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发表时间：
2010-05
影响因子：
6.7
通讯作者：
Z.H. Wu
中科院分区：
文献类型：
--
作者：
X.Y. Han;J.N. Dai;C.Q. Chen;C.H. Yu;Y.H. Gao;Z.H. Wu
在本研究中，作者研究了脉冲激光沉积在GaN/r平面蓝宝石上生长的ZnO层的结构和光学性质。x射线衍射结果表明，ZnO薄膜在a轴取向高度优先沉积；两个正交方向上不同的摇摆曲线值表明生长平面ZnO具有较低的c2v对称性。从自由应力到大拉应力（约1.34×109Pa）沿ZnO生长方向的分布由可见拉曼映射光谱揭示。在325nm紫外光下，在拉曼光谱中观察到高阶纵向光学（LO）声子模式显著增强至4阶，无to声子模式；由于具有条纹状生长特征的薄膜表面的无序性增加，还观察到强烈而广泛的无序激活表面声子模式。低温光致发光测量表明，ZnO的带边发射主要是中性供体束缚激子和自由电子向中性受体发射。通过透射电镜观察ZnO/GaN的界面微观结构，发现ZnO/GaN的外延关系为（101¯0）ZnO//（0002¯）GaN。这些结果表明，GaN模板在ZnO薄膜的生长中发挥了重要作用，充分利用了小晶格失配的优势。
In this study, the authors have investigated the structural and optical properties of ZnO layer grown by pulsed laser deposition on GaN/r-plane sapphire. X-ray diffraction results demonstrate the ZnO film to be highly preferentially deposited at a-axis orientation; the different rocking curve values along the two orthogonal directions indicate the low C2vsymmetry in the growth a-plane ZnO. From free stress to large tensile stress (about 1.34×109Pa) distribution along the growth direction of ZnO is revealed by visible Raman mapping spectra. The enhanced significantly high-order longitudinal-optical (LO) phonon modes up to 4th and no TO phonons have been observed in Raman spectrum under UV 325nm by resonance conditions; an intense and broad disorder activated surface phonon mode is also observed, resulting from the increased disorder on the film surface with stripe-like growth features. Low-temperature photoluminescence measurements reveal that the band-edge emission of ZnO is dominated by neutral donor-bound exciton and free electrons to neutral acceptor emissions. Interfacial microstructure of ZnO/GaN has been examined by transmission electron microscopy, with the epitaxial relationship (101¯0) ZnO//(0002¯) GaN. All these results indicated that GaN template played an important role in the growth of ZnO film, with full advantage of small lattice mismatch.
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影响因子：
4
作者：
A. Chakraborty;Kwangchoong Kim;Feng Wu;J. Speck;S. Denbaars;U. Mishra
通讯作者：
A. Chakraborty;Kwangchoong Kim;Feng Wu;J. Speck;S. Denbaars;U. Mishra
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影响因子：
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影响因子：
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作者：
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通讯作者：
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影响因子：
4
作者：
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通讯作者：
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