Roll-over behavior in current-voltage curve introduced by an energy barrier at the front contact in thin film CdTe solar cell
Roll-over behavior in current-voltage curve introduced by an energy barrier at the front contact in thin film CdTe solar cell
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薄膜 CdTe 太阳能电池前接触处的能垒引起的电流电压曲线翻转行为
DOI：
10.1016/j.solener.2018.02.075
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发表时间：
2018-05
期刊：
影响因子：
6.7
通讯作者：
Wang Deliang
中科院分区：
文献类型：
--
作者：
Li Xun;Shen Kai;Li Qiang;Deng Yi;Zhu Peng;Wang Deliang
在碲化镉薄膜太阳能电池中，经常观察到电流-电压（J-V）曲线的翻转现象。在光J-V曲线中，在开路电压附近发生的翻转现象是由于CdTe太阳能电池背接触中CdTe/金属界面处形成的肖特基能量势垒。在这项研究中，我们报道了一种由CdTe太阳能电池正面接触处的能量势垒引起的J-V翻转现象。在CdTe太阳能电池的窗口层CdS和氟掺杂氧化锡（FTO）前电极之间沉积了两种氧化物al2o3和SnO2作为高阻透明（HRT）层。这两种氧化物在FTO和CdS上表现出非常不同的电子带对准。sno2与CdS几乎没有形成能垒，这使得光生电子从CdTe平滑传输到CdS和FTO。而al2o3与CdS形成了高能垒。CdTe薄膜太阳能电池在CdS/ al2o3界面处具有3.43 eV的高能垒，引起了J-V翻转现象，导致电池器件效率急剧下降。FTO/Al2O3/CdS界面处的电子传递受隧道效应支配。本研究结果表明，前电极的能带结构对CdTe薄膜太阳能电池的性能起着重要的作用。
Roll-over phenomenon in the current–voltage (J–V) curve is often observed in a CdTe thin film solar cell. The roll-over phenomenon, which is occurred near the open-circuit voltage in a light J–V curve, is due to Schottky energy barrier formed at the CdTe/metal interface in a CdTe solar cell back contact. In this study we report a J–V roll-over phenomenon which is induced by an energy barrier at the front contact of a CdTe solar cell. Two kinds of oxides, namely, Al2O3and SnO2, were deposited as high-resistance transparent (HRT) layer between the window layer CdS and the fluorine doped tin oxide (FTO) front electrode in CdTe solar cells. These two oxides present much different electronic band alignment with FTO and CdS. SnO2formed almost no energy barrier with CdS, this allowed smooth transport for photo-generated electrons from CdTe to CdS and FTO. However, Al2O3formed a high energy barrier with CdS. The rather high energy barrier with a value of 3.43 eV at the CdS/Al2O3interface induced a J–V roll-over phenomenon in a CdTe thin film solar cell, which dramatically led to a quick decrease for the cell device efficiency. The electron transport at the FTO/Al2O3/CdS interface is governed by tunneling effect. The results presented in this study demonstrate that the band structure at the front electrode plays an important role for the performance of a CdTe thin film solar cell.
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影响因子：
3.2
作者：
D. Niles;D. Rioux;H. Höchst
通讯作者：
D. Niles;D. Rioux;H. Höchst
CdTe太阳能电池在低强度光辐照度下的性能
影响因子：
6.9
作者：
Yang, Ruilong;Deng, Yi;Jeng, Ming-Jer;Wang, Deliang
通讯作者：
Wang, Deliang
影响因子：
6.7
作者：
Wu, XZ
通讯作者：
Wu, XZ
影响因子：
2.1
作者：
Fritsche, J;Kraft, D;Jaegermann, W
通讯作者：
Jaegermann, W
影响因子：
1.4
作者：
Miyazaki, S;Miyazaki, S
通讯作者：
Miyazaki, S