In situ X-ray investigation of lattice strain in SrTiO3/La0.7Sr0.3MnO3 thin films induced by piezoelectric 0.72Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 substrate in an external electric field

In situ X-ray investigation of lattice strain in SrTiO3/La0.7Sr0.3MnO3 thin films induced by piezoelectric 0.72Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 substrate in an external electric field
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DOI:
10.1007/s00339-008-5048-3
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发表时间:
2009
期刊:
Applied Physics A
影响因子:
--
通讯作者:
D. C. Meyer
D. C. Meyer
中科院分区:
--
文献类型:
--
作者:
A. A. Levin;T. Weissbach;A. I. Pommrich;O. Bilani-Zeneli;D. C. Meyer

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在An(001)PbTiO_3(Mg1/3Nb_2/3)TiO_3-28摩尔%PbTiO_3压电弛豫铁电单晶片上生长了厚度为30 nm的(001)取向的SrTiO_3(STO)/La0.7Sr0.3MnO_3(LSMO)薄膜。电场强度高达±18千伏/厘米。通过对薄膜和衬底反射剖面的WAX射线测量,分别确定了薄膜和衬底中的应变。利用PMN-PT衬底的巨大逆压电效应,有效地控制了STO/LSMO薄膜的应变状态。得到了STO/LSMO/PMN-PT复合体系薄膜和衬底中电场诱导的离面应变之间的耦合系数。
Composite structures consisting of (001)-oriented SrTiO3(STO)/La0.7Sr0.3MnO3(LSMO) films of 30 nm thickness, grown on an (001) Pb(Mg1/3Nb2/3)TiO3– 28 mol.% PbTiO3piezoelectric relaxor-ferroelectric single-crystalline wafer were investigated by means of Wide-Angle X-ray Diffraction (WAXRD) in situ under influence of a d.c. electric field with strengthEup to ±18 kV/cm. The WAXRD measurements of the films and substrate reflection profiles resulted in a determination of the strainsin the films and the substrate separately. The strained state of the STO/LSMO films is effectively controlled by a huge converse piezoelectric effect of the PMN-PT substrate. The coefficients of coupling between electric-field-induced out-of-plane strain in the films and in the substrate for the composite system STO/LSMO/PMN-PT are obtained.
DOI: 10.1103/physrevb.75.054408
发表时间: 2007-02-01
期刊: PHYSICAL REVIEW B
影响因子: 3.7
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