Electrically tunable spin-orbit interaction in an InAs nanosheet.
Electrically tunable spin-orbit interaction in an InAs nanosheet.
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DOI：
10.1039/d2na00143h
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发表时间：
2022-06-14
影响因子：
4.7
通讯作者：
中科院分区：
文献类型：
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作者：
我们报告了双栅极场效应器件中外延生长的独立 InAs 纳米片中自旋轨道相互作用 (SOI) 的实验研究。栅极传输特性测量表明，使用双栅极可以有效地实现纳米片中载流子密度和纳米片上电势差的独立调节。通过低温磁导测量研究了 InAs 纳米片的量子输运特性。结果表明，通过在双栅极上施加电压，纳米片中的电子传输可以从弱反局域化调整到弱局域化，然后回到弱反局域化状态，而不改变载流子密度。从恒定载流子密度下的磁导测量中提取的自旋轨道长度表现出一个峰值，在该峰值处，Rashba 型 SOI 受到抑制，并且可以揭示由于纳米片中存在 Dresselhaus 型 SOI 导致的自旋弛豫。还在实验条件下对该器件进行了能带图模拟，并根据模拟结果讨论了对实验观察的物理见解。 InAs 纳米片中的磁输运表现出从 WAL 到 WL 然后再返回到 WAL 特性的转变，并展示了使用双门对纳米片中 Rashba 自旋轨道耦合的有效调谐。
We report an experimental study of the spin–orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tuning of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with the use of a dual gate. The quantum transport characteristics of the InAs nanosheet are investigated by magnetoconductance measurements at low temperatures. It is shown that the electron transport in the nanosheet can be tuned from the weak antilocalization to the weak localization and then back to the weak antilocalization regime with a voltage applied over the dual gate without a change in the carrier density. The spin–orbit length extracted from the magnetoconductance measurements at a constant carrier density exhibits a peak value at which the SOI of the Rashba type is suppressed and the spin relaxation due to the presence of an SOI of the Dresselhaus type in the nanosheet can be revealed. Energy band diagram simulations have also been carried out for the device under the experimental conditions and the physical insights into the experimental observations have been discussed in light of the results of simulations. The magnetotransport in an InAs nanosheet exhibits a transition from the WAL to the WL and then back to the WAL characteristics and demonstrates an efficient tuning of the Rashba spin-orbit coupling in the nanosheet with the use of a dual gate.
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影响因子：
4
作者：
Hatke, A. T.;Wang, T.;Manfra, M. J.
通讯作者：
Manfra, M. J.
晶圆级高质量 InAs 纳米结构的尺寸工程
影响因子：
10.8
作者：
Pan, Dong;Wang, Ji-Yin;Zhao, Jianhua
通讯作者：
Zhao, Jianhua
影响因子：
56.9
作者：
Koo, Hyun Cheol;Kwon, Jae Hyun;Johnson, Mark
通讯作者：
Johnson, Mark
影响因子：
9.7
作者：
Mittag, Christopher;Koski, Jonne, V;Ensslin, Klaus
通讯作者：
Ensslin, Klaus
影响因子：
8.6
作者：
Rashba, EI;Efros, AL
通讯作者：
Efros, AL