A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters
A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters
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具有低寄生参数的紧凑型双面冷却 650V/30A GaN 功率模块
DOI：
10.1109/tpel.2021.3092367
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发表时间：
2021-06
影响因子：
6.7
通讯作者：
Wenjie Chen
中科院分区：
文献类型：
--
作者：
Bingyang Li;Xu Yang;Kangping Wang;Hongkeng Zhu;Laili Wang;Wenjie Chen
与硅和碳化硅器件相比，氮化镓高电子迁移率晶体管（GaN HEMT）独特的电学和结构特性使其对功率模块集成有不同的要求。提出了一种新的无引线高压横向GaN HEMT管芯集成方案。基于所提出的集成方案，设计了一个紧凑的650 V/30 A GaN功率模块，具有低寄生参数和高热性能。GaN管芯夹在两个陶瓷衬底之间，以提高热性能并确保一致的热膨胀系数。多铜层结构用于增加布线灵活性以减少寄生参数。讨论了门电路和电源环路的设计，并对共模电容进行了优化。对该集成方案进行了可靠性综合评估。最后，制作了一个尺寸为2.4 cm×1.3 cm×0.17 cm的双面冷却650 V/30 A全桥GaN功率模块。热阻比传统的单面散热模块降低30%-48%。功率环和门环电感分别降低到0.94 nH和2 nH，共模电容限制为2.5 pF。漏源电压的最大dv/dt高达150 V/ns，只有10%的过冲。基于该功率模块，研制了一台3.3kW的两相交错并联Buck变换器。它具有820 W/in 3的功率密度和98.85%的峰值效率。
Compared with silicon and silicon carbide devices, the unique electrical and structural characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them have different requirements for power module integration. This article proposes a novel integration scheme for the high-voltage lateral GaN HEMT dies without bonding wires. Based on the proposed integration scheme, a compact 650 V/30 A GaN power module with low parasitic parameters and high thermal performance is designed. The GaN dies are sandwiched between two ceramic substrates to improve thermal performance and ensure consistent thermal expansion coefficients. The multiple copper layer structure is used to increase wiring flexibility to reduce parasitic parameters. The design of gate and power loop layouts is discussed, and the common-mode (CM) capacitance is optimized. A comprehensive reliability evaluation is also carried out for this integration scheme. Finally, a double-sided cooling 650 V/30 A full-bridge GaN power module with 2.4 cm×1.3 cm×0.17 cm is fabricated. The thermal resistance is reduced by 30%–48% compared with the conventional single-sided cooling module. The power loop and gate loop inductances are reduced to 0.94 nH and 2 nH, respectively, and the CM capacitance is limited to 2.5 pF. The maximum dv/dt of the drain–source voltage is high as 150 V/ns with only 10% overshoot. Based on the power module, a 3.3-kW two-phase interleaved buck converter is developed. It has 820 W/in3 power density and 98.85% peak efficiency.
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影响因子：
6.7
作者：
Y. Yerasimou;V. Pickert;B. Ji;Xueguan Song
通讯作者：
Y. Yerasimou;V. Pickert;B. Ji;Xueguan Song
DOI：
10.1109/apec.2018.8341177
发表时间：
2018-03
期刊：
2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
影响因子：
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作者：
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通讯作者：
Stephen Savulak;Ben Guo;S. Krishnamurthy
影响因子：
6.7
作者：
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通讯作者：
A. B. Jørgensen;S. Bęczkowski;C. Uhrenfeldt;N. H. Petersen;S. Jørgensen;S. Munk‐Nielsen
DOI：
--
发表时间：
2006
期刊：
--
影响因子：
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作者：
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通讯作者：
L. Balogh
影响因子：
6.7
作者：
G. Zulauf;M. Guacci;J. Kolar
通讯作者：
G. Zulauf;M. Guacci;J. Kolar