Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor
Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor
复制标题
边缘电容对GeOI金属氧化物半导体场效应晶体管阈值电压和亚阈值摆幅的影响
DOI：
10.1088/1674-1056/24/3/037303
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发表时间：
2015-03
影响因子：
1.7
通讯作者：
Huang Yong
中科院分区：
文献类型：
--
作者：
Xu Jing-Ping;Liu Lu;Bai Yu-Rong;Huang Yong
Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor (MOSFET) are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a short-channel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.
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影响因子：
3.1
作者：
S. Agrawal;J. Fossum
通讯作者：
S. Agrawal;J. Fossum
影响因子：
3.1
作者：
Seung-Hwan Kim;J. Fossum;Ji-Woon Yang
通讯作者：
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影响因子：
3.1
作者：
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M.J. Kumar;S.K. Gupta;V. Venkataraman
影响因子：
3.1
作者：
Wenjuan Zhu;Jin-Ping Han;T. Ma
通讯作者：
Wenjuan Zhu;Jin-Ping Han;T. Ma
影响因子：
1.7
作者：
C. L. Royer;L. Clavelier;C. Tabone;K. Romanjek;C. Deguet;L. Sanchez;J. Hartmann;M. Roure;H. Grampeix;S. Soliveres;G. Carval;R. Truche;A. Pouydebasque;M. Vinet;S. Deleonibus
通讯作者：
C. L. Royer;L. Clavelier;C. Tabone;K. Romanjek;C. Deguet;L. Sanchez;J. Hartmann;M. Roure;H. Grampeix;S. Soliveres;G. Carval;R. Truche;A. Pouydebasque;M. Vinet;S. Deleonibus