Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron
Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron
复制标题
通过铁的可操纵插层在 SiC(0001) 表面上制备准自支撑石墨烯
DOI：
10.1021/acs.jpcc.8b06789
复制
发表时间：
2018-08
影响因子：
3.7
通讯作者：
Song Fei
中科院分区：
文献类型：
--
作者：
Shen Kongchao;Sun Haoliang;Hu Jinping;Hu Huinbang;Liang Zhaofeng;Li Haiyang;Zhu Zhiyuan;Huang Yaobo;Kong Lingyuan;Wang Yu;Jiang Zheng;Huang Han;Wells Justin W.;Song Fei
石墨烯由于其独特的电子特性而被赋予了新一代电子产品的吸引力。然而，石墨烯与支撑衬底之间的相互作用极大地限制了其技术应用。在这里，我们展示了在SiC（0001）上的外延单层石墨烯转化为去耦的双层石墨烯，利用热退火操纵的可操纵铁嵌入。通过拉曼散射和光发射测量，我们对嵌入过程进行了深入的研究，并展示了解耦双层石墨烯的准独立性质，其独特的结构和电子特性。在石墨烯层顶部吸附后，可以通过温度驱动过程控制Fe原子的插入，这大大改变了缓冲层和SiC衬底之间的界面相互作用，相应地，原始图的掺杂水平。
Graphene has been granted with appealing attributes for new-generation electronics due to its unique electronic properties. However, the interaction between graphene and the supporting substrate substantially limits its technological application. Here, we demonstrate the transformation of epitaxial monolayer graphene on SiC(0001) into decoupled bilayer graphene using steerable iron intercalation manipulated by thermal annealing. By means of Raman scattering and photoemission measurements, we have performed an in-depth investigation of the intercalation procedure and shown the quasi-free-standing nature of the decoupled bilayer graphene afterward, as characterized by its unique structural and electronic properties. The intercalation of Fe atoms can be manipulated through temperature-driven processes after adsorption on top of the graphene layer, and this substantially modifies the interfacial interaction between the buffer layer and SiC substrate and, correspondingly, the doping level of the pristine graph...
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影响因子：
19.6
作者：
Bostwick, Aaron;Ohta, Taisuke;Rotenberg, Eli
通讯作者：
Rotenberg, Eli
影响因子：
41.2
作者：
Emtsev, Konstantin V.;Bostwick, Aaron;Seyller, Thomas
通讯作者：
Seyller, Thomas
影响因子：
15
作者：
Ha-Chul Shin;Yamujin Jang;Tae-Hoon Kim;Jun-Hae Lee;D. Oh;S. Ahn;Jae Hyun Lee;Y. Moon;Ji-Hoon Park;S. Yoo;Chong-Yun Park;D. Whang;Cheol‐Woong Yang;J. Ahn
通讯作者：
Ha-Chul Shin;Yamujin Jang;Tae-Hoon Kim;Jun-Hae Lee;D. Oh;S. Ahn;Jae Hyun Lee;Y. Moon;Ji-Hoon Park;S. Yoo;Chong-Yun Park;D. Whang;Cheol‐Woong Yang;J. Ahn
DOI：
10.1002/pssb.19670200210
发表时间：
1967-12
期刊：
April 1
影响因子：
--
作者：
H. Bonzel
通讯作者：
H. Bonzel
影响因子：
56.9
作者：
Lin, Y. -M.;Dimitrakopoulos, C.;Avouris, Ph.
通讯作者：
Avouris, Ph.