Computer modeling of crystal growth of silicon for solar cells
Computer modeling of crystal growth of silicon for solar cells
复制标题
太阳能电池用硅晶体生长的计算机建模
DOI：
10.1007/s11708-011-0155-9
复制
发表时间：
2011-05
影响因子：
2.9
通讯作者：
Li Zaoyang
中科院分区：
文献类型：
--
作者：
Liu Xin;Liu Lijun;Kakimoto Koichi;Li Zaoyang
开发了一种具有太阳能电池硅晶体生长过程中传热全局模型的计算机模拟器。使用有限体积法以耦合方式一起求解炉内的对流、传导和辐射传热。具有 3D 特征的三维 (3D) 全局传热模型特别适合任何晶体生长，同时保持工程应用对计算机资源的要求。提出了结构化/非结构化组合网格方案以提高仿真效率和精度。开发了熔体-晶体 (mc) 界面的动态模型来预测晶体生长过程中的相界面行为。模拟器中还引入了杂质和析出物的动态模型。介绍了计算机模拟器在太阳能电池硅晶体直拉（CZ）生长过程和定向凝固过程中的应用。介绍并讨论了一些典型的结果，包括 CZ-Si 工艺大型坩埚中的湍流熔体流动、MC 界面的动态行为以及杂质和沉淀物（如氧、碳和 SiC 颗粒）的传输和分布。研究结果表明，计算机建模作为分析和改进太阳能硅材料晶体生长工艺和熔炉设计的有效工具的重要性。
A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volumemethod. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator.Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.
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影响因子：
1.8
作者：
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通讯作者：
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影响因子：
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作者：
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通讯作者：
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