Micro-structure and Room-Temperature Thermoelectric Properties of Bi-Doped Antimony Zinc Thin Films Fabricated by Co-sputtering Method
Micro-structure and Room-Temperature Thermoelectric Properties of Bi-Doped Antimony Zinc Thin Films Fabricated by Co-sputtering Method
复制标题
共溅射双掺杂锑锌薄膜的微结构和室温热电性能
DOI：
10.1007/s11664-016-5144-7
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发表时间：
2017-05
影响因子：
2.1
通讯作者：
Yin Mei Mei
中科院分区：
文献类型：
--
作者：
Wei Meng;Fan Ping;Zheng Zhuang Hao;Luo Jing Ting;Liang Guang Xing;Zhong Ai Hua;Yin Mei Mei
在本报告中，采用直接磁控共溅射技术在BK7玻璃基底上制备了铋掺杂的锑锌薄膜。铋在沉积过程的中途进行掺杂，掺杂含量分别为2原子%、4原子%和6原子%。
In this report, Bi-doped antimony zinc thin films were prepared on BK7 glass substrates by using direct magnetron co-sputtering technique. Bi was doped at the halfway point of deposition, and the doping contents were 2 at.%, 4 at.%, and 6 at.%, respectively. We present the micro-structural and room-temperature thermoelectric properties of Bi-doped Zn-Sb thin films in this paper. The maximum value of the Seebeck coefficient was found to be 300 μV/K with a Bi content of 6 at.%. This is one of the highest values of the Seebeck coefficient for Zn-Sb thin films deposited by direct magnetron co-sputtering. Carrier concentration is obtained from Hall effect measurements, which provided insights into the transport mechanisms that affected electrical conductivity and Seebeck coefficient. It is significant to doping Bi, which enhances the power factor to an optimal value of 0. 26 mW/mK2and the optimalZTvalue to 0.086 with the Bi content of 4 at.% at room-temperature.
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影响因子：
4
作者：
D. Song;Wei Liu;T. Zeng;T. Borca-Tasciuc;Gang Chen;J. Caylor;T. Sands
通讯作者：
D. Song;Wei Liu;T. Zeng;T. Borca-Tasciuc;Gang Chen;J. Caylor;T. Sands
影响因子：
6.2
作者：
Zhuang‐hao Zheng;P. Fan;Jingting Luo;G. Liang;Peng-juan Liu;Dong-ping Zhang
通讯作者：
Zhuang‐hao Zheng;P. Fan;Jingting Luo;G. Liang;Peng-juan Liu;Dong-ping Zhang
Ag掺杂对Zn4Sb3低温热电性能的影响
影响因子：
6.2
作者：
通讯作者：
--
影响因子：
3.2
作者：
A. Litvinchuk;J. Nylén;B. Lorenz;A. Guloy;U. Häussermann
通讯作者：
A. Litvinchuk;J. Nylén;B. Lorenz;A. Guloy;U. Häussermann
影响因子：
--
作者：
P. Shaver;J. Blair
通讯作者：
P. Shaver;J. Blair