Beyond EUV lithography: a comparative study of efficient photoresists' performance.
Beyond EUV lithography: a comparative study of efficient photoresists' performance.
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DOI：
10.1038/srep09235
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发表时间：
2015-03-18
影响因子：
4.6
通讯作者：
Ekinci Y
中科院分区：
文献类型：
--
作者：
Mojarad N;Gobrecht J;Ekinci Y
13.5 nm的极紫外光刻技术是构图集成电路的主要候选技术，并在未来十年内达到10 nm以下的分辨率。如果基于光子的光刻仍被用于制作更小特征尺寸的图案，Beyond EUV(BEUV)6.x nm波长的光刻是一种潜在地满足半导体行业严格要求的选择。我们展示了不同光刻胶在BEUV下的分辨率、线边缘粗糙度和灵敏度的同时表征，并比较了它们在相同条件下暴露在EUV下的特性。通过使用这些波长的干涉光刻，我们展示了超过22 nm分辨率的图案化的可能性，并表征了使用更高能量的光子对线边缘粗糙度和曝光宽度的影响。我们观察了光刻胶性能对其化学成分的高灵敏度，并使用Z参数准则比较了它们的整体性能。有趣的是，无机光致抗蚀剂在BEUV下的性能要好得多，而有机化学放大光致抗蚀剂要在这样的波长下使用，需要进行严格的调整。我们的结果对于更深入地理解新型光致抗蚀剂在极紫外光谱和软X射线光谱的辐射化学具有直接的意义。
Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra.
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影响因子：
3.8
作者：
Makhotkin, Igor A.;Zoethout, Erwin;Bijkerk, Fred
通讯作者：
Bijkerk, Fred
影响因子：
4
作者：
Medvedev, V. V.;van de Kruijs, R. W. E.;Bijkerk, F.
通讯作者：
Bijkerk, F.
影响因子：
3.5
作者：
Paeivaenranta, Birgit;Langner, Andreas;Ekinci, Yasin
通讯作者：
Ekinci, Yasin
影响因子：
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作者：
Bae, Woo Jin;Trikeriotis, Markos;Ober, Christopher K.
通讯作者：
Ober, Christopher K.
影响因子：
4
作者：
Chkhalo, N. I.;Kuenstner, S.;Starikov, S. D.
通讯作者：
Starikov, S. D.