Contrast Experiments in Dielectrophoresis Polishing (DEPP)/Chemical Mechanical Polishing (CMP) of Sapphire Substrate

Contrast Experiments in Dielectrophoresis Polishing (DEPP)/Chemical Mechanical Polishing (CMP) of Sapphire Substrate
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蓝宝石衬底介电泳抛光(DEPP)/化学机械抛光(CMP)对比实验

DOI:
10.3390/app9183704
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发表时间:
2019-09
影响因子:
2.7
通讯作者:
Wang Xu
Wang Xu
中科院分区:
综合性期刊4区
文献类型:
--
作者:
Zhao Tianchen;Yuan Julong;Deng Qianfa;Feng Kaiping;Zhou Zhaozhong;Wang Xu

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蓝宝石衬底在许多领域的广泛应用,迫切需要一种高效、高精度的蓝宝石衬底抛光方法。提出了一种基于介电泳效应的蓝宝石衬底抛光方法。介绍了介电电泳抛光的原理。在抛光区域中添加非均匀电场,以通过DEP力驱动磨料在朝向板的方向上移动。参与抛光作用的磨料的量随着抛光浆料在蓝宝石表面上的分布的改变而增加,从而导致蓝宝石抛光的质量和效率的提高。进行了DEPP与传统化学机械抛光(CMP)的对比实验。结果发现,DEPP的蓝宝石MRR的最大增加为71%,达到13 mg/h,最小增加为9.5%,达到4.6 mg/h。蓝宝石衬底的表面粗糙度与DEPP下降更快,更均匀。DEPP后蓝宝石衬底的最终表面粗糙度为Ra 0.87 nm,平坦度为0.3078波(RMS值),优于传统CMP抛光蓝宝石衬底的0.6863波(RMS值)。
The broad applications of sapphire substrates in many fields warrants an urgent demand for a highly efficient and high precision polishing method for the sapphire substrates. The authors proposed a novel sapphire substrate polishing method that is based on the dielectrophoresis (DEP) effect. The principle of dielectrophoresis polishing (DEPP) is described. A non-uniform electric field was added in the polishing area to drive abrasives moving in the direction towards the plate by the DEP force. The amount of abrasives that participates in the polishing action increases as the distribution of polishing slurry on sapphire surface changes, leading towards the improvement of sapphire polishing both in quality and efficiency. Comparative experiments between DEPP and traditional chemical mechanical polishing (CMP) were carried out. It was found that the maximum increase of sapphire MRR for DEPP is 71%, reaching 13 mg/h, and the minimum increase was 9.5%, reaching 4.6 mg/h. The surface roughness of the sapphire substrate decreases faster and more uniform with DEPP. The final surface roughness of the sapphire substrate after DEPP was Ra 0.87 nm and the flatness was 0.3078 waves (RMS value), which is better than 0.6863 waves (RMS value) of sapphire substrate with traditional CMP polishing.
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