An International Topics Conference on the Physics of Mos Insulators; June 18-20, 1980, Raleigh, North Carolina
An International Topics Conference on the Physics of Mos Insulators; June 18-20, 1980, Raleigh, North Carolina
批准号:
8003288
负责人:
Gerald Lucovsky
金额:
$0.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1980
资助国家:
美国
项目状态:
已结题
起止时间:
1980-06-15 至 1980-11-30
中文摘要
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英文摘要
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会议论文
Elimination of low-K interfacial transition regions on crystalline Ge, and on ultra thin Ge passivation layers on GaAs and InGaAs: a pathway to EOT scaling to 0.5 nm
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批准号:0823805
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项目类别:Standard Grant
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资助金额:$33.0万
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财政年份:2008
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负责人:Gerald Lucovsky
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依托单位:
海外基金