Elimination of low-K interfacial transition regions on crystalline Ge, and on ultra thin Ge passivation layers on GaAs and InGaAs: a pathway to EOT scaling to 0.5 nm

摘要目的和方法：本研究的目的是通过减少锗介电界面上的缺陷，并减少限制等效氧化物厚度缩放的低k界面过渡区，为优化锗CMOS器件提供科学基础。该方法包括优化湿化学沉积前清洗，在高k介电沉积过程中对Ge表面进行氮化钝化以防止皮下氧化，在沉积后退火过程中监测埋藏界面中N的演变的先进光谱技术，以及比较界面和体缺陷的光谱和电学研究。ii)智力优势：通过开发无原生氧化锗、氮化镓和氧化氮化镓界面过渡区的器件级锗介电界面，将纳米cmos器件扩展到11纳米2022工艺节点。纳米级Hf Ge氧化氮界面层的集成将通过消除硅衬底上的低k硅界面层来减少可实现的EOT结垢。内部阴极发光和光谱椭偏加上同步加速器XAS和XPS将区分预先存在的，加工和应力引起的缺陷。探索性研究将评估化合物半导体衬底的类似方法。iii)更广泛的影响：该项目将扩大高中女性研究经验项目，包括来自哥伦布地区高中的女性，包括俄勒冈州立大学校园的夏季研究机会。在工程学院、女性工程项目和电气与计算机工程系的支持下，一个扩大的项目将包括当地高中初级科学教师，选择积极性高、有才华的女性，并将她们与俄勒冈州立大学工程学院教员配对。类似的项目也将在北卡州立大学实施。

From: Gerry Lucovsky10 June 2008Ref: Proposal 00823805Short Abstract i) Objective and Approach: The objectives of this research are to provide a science base for optimization of scaled Ge CMOS devices by reducing defects at Ge dielectric interfaces, and to minimize low-K interfacial transition regions that limit equivalent oxide thickness scaling. The approach includes optimization of wet chemical pre-deposition cleaning, nitride passivation of Ge surfaces to prevent subcutaneous oxidation during high-K dielectric depositions, advanced spectroscopic techniques to monitor evolution of N from buried interfaces during post deposition anneals, and spectroscopic and electrical studies comparing interfacial and bulk defects. ii) Intellectual Merit: The proposed research will extend nano-CMOS devices to the 11 nm 2022 processing node by developing device-quality Ge-dielectric interfaces without native Ge oxide, nitride and oxynitride interfacial transition regions. Integration of nano-scale Hf Ge oxynitride interfacial layers will reduce attainable EOT scaling by eliminating lower-K SiON interfacial layers on Si substrates. In-house cathodoluminescence and spectroscopic ellipsometry plus synchrotron XAS and XPS will distinguish between pre-existing, and processing and stress induced defects. Exploratory studies will evaluate a similar approach for compound semiconductor substrates.iii) Broader Impact: This project will expand the Research Experience for High School Women program to include women from Columbus area high schools, including summer research opportunities on the OSU campus. With support from the College of Engineering, the Women in Engineering Program, and the Department of Electrical & Computer Engineering, an expanded program will include local high school junior-level science teachers, selecting highly motivated and talented women and pairing them with OSU engineering faculty. Similar programs will be implemented at NCSU.