Elimination of low-K interfacial transition regions on crystalline Ge, and on ultra thin Ge passivation layers on GaAs and InGaAs: a pathway to EOT scaling to 0.5 nm

消除晶体 Ge 以及 GaAs 和 InGaAs 上超薄 Ge 钝化层上的低 K 界面过渡区域：EOT 缩放至 0.5 nm 的途径

• 批准号: 0823805
• 负责人: Gerald Lucovsky
• 金额: $ 33万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0823805&HistoricalAwards=false
• 关键词: Elimination; low; interfacial; transition; regions

From: Gerry Lucovsky10 June 2008Ref: Proposal 00823805Short Abstract i) Objective and Approach: The objectives of this research are to provide a science base for optimization of scaled Ge CMOS devices by reducing defects at Ge dielectric interfaces, and to minimize low-K interfacial transition regions that limit equivalent oxide thickness scaling. The approach includes optimization of wet chemical pre-deposition cleaning, nitride passivation of Ge surfaces to prevent subcutaneous oxidation during high-K dielectric depositions, advanced spectroscopic techniques to monitor evolution of N from buried interfaces during post deposition anneals, and spectroscopic and electrical studies comparing interfacial and bulk defects. ii) Intellectual Merit: The proposed research will extend nano-CMOS devices to the 11 nm 2022 processing node by developing device-quality Ge-dielectric interfaces without native Ge oxide, nitride and oxynitride interfacial transition regions. Integration of nano-scale Hf Ge oxynitride interfacial layers will reduce attainable EOT scaling by eliminating lower-K SiON interfacial layers on Si substrates. In-house cathodoluminescence and spectroscopic ellipsometry plus synchrotron XAS and XPS will distinguish between pre-existing, and processing and stress induced defects. Exploratory studies will evaluate a similar approach for compound semiconductor substrates.iii) Broader Impact: This project will expand the Research Experience for High School Women program to include women from Columbus area high schools, including summer research opportunities on the OSU campus. With support from the College of Engineering, the Women in Engineering Program, and the Department of Electrical & Computer Engineering, an expanded program will include local high school junior-level science teachers, selecting highly motivated and talented women and pairing them with OSU engineering faculty. Similar programs will be implemented at NCSU.

发件人：Gerry Lucovsky 2008年6月10日参考：提案00823805简短摘要i）目的和方法：本研究的目的是通过减少Ge介电界面的缺陷，并最大限度地减少限制等效氧化物厚度缩放的低K界面过渡区，为缩放Ge CMOS器件的优化提供科学基础。该方法包括优化湿化学预沉积清洗，锗表面的氮化物钝化，以防止皮下氧化在高K电介质沉积，先进的光谱技术，以监测从埋界面的N在沉积后退火的演变，以及光谱和电气研究比较界面和体缺陷。（二）智力优势：拟议的研究将扩展纳米CMOS器件的11纳米2022处理节点，通过开发设备质量的锗介电界面没有原生锗氧化物，氮化物和氮氧化物界面过渡区。纳米级Hf Ge氮氧化物界面层的集成将通过消除Si衬底上的低K锡永界面层来减少可获得的EOT缩放。内部阴极射线发光和光谱椭圆偏振加上同步加速器XAS和XPS将区分预先存在的，加工和应力引起的缺陷。探索性研究将评估化合物半导体衬底的类似方法。三）更广泛的影响：该项目将扩大高中妇女方案的研究经验，包括来自哥伦布地区高中的妇女，包括在俄勒冈州立大学校园的夏季研究机会。在工程学院，工程项目妇女和电气计算机工程系的支持下，一个扩大的项目将包括当地高中初级科学教师，选择积极性高和有才华的妇女，并将她们与俄勒冈州立大学工程系配对。类似的计划将在NCSU实施。