(Ga,A1)As Optoelectronics on Oxidized Silicon Wafers for High Speed IC Optical Interconnect

互联互通在限制 高性能集成电路芯片和系统的速度。 这一动机促进了研究使用光学而不是 电气互连。 正在进行的研究涉及 由于使用标准硅晶片的努力而引起的制造问题 并结合了砷化镓（GaAs）发光体。 的 方法是实验性的，并研究使用铟来帮助 匹配不同材料的晶格。

Interconnects are playing an increasingly important role in limiting the speed of high performance integrated circuit chips and systems. This motivation has fostered research to use optical rather than electrical interconnects. The research in progress addresses the fabrication problems posed by efforts to use the standard silicon wafer with a gallium arsenide (GaAs) light emitter incorporated. The approach is experimental and investigates use of indium to aid in matching lattices of different materials.