(Ga,A1)As Optoelectronics on Oxidized Silicon Wafers for High Speed IC Optical Interconnect

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Interconnects are playing an increasingly important role in limiting the speed of high performance integrated circuit chips and systems. This motivation has fostered research to use optical rather than electrical interconnects. The research in progress addresses the fabrication problems posed by efforts to use the standard silicon wafer with a gallium arsenide (GaAs) light emitter incorporated. The approach is experimental and investigates use of indium to aid in matching lattices of different materials.