Integration of GaAlAs Heterostructure Optoelectronics on Si Integrated Circuits for High Speed Interfaces and Interconnects

这项为期一年的研究工作建立在过去的分子生物学进展的基础上。 在以前的条件下实现了Si上GaAl As异质结构的束外延 NSF支持 它将集中精力提高 硅基连续波激光二极管 量子阱有源区，提高材料质量， 残余的“散装”层菌株。 与卡尔教授的合作 汤普森在材料科学与工程系的 成核的初始阶段和改进生长的发展 技术将继续。 选定区域的初步工作 外延将进行，并与同事积极合作， 在硅为导向的麻省理工学院微系统技术实验室将是 建立了一个发展序列，这是兼容 BICMOS进程。

This one-year research effort builds on past advances in the molecular beam epitaxy of GaA1As heterostructures on Si achieved under previous NSF support. It will concentrate on improving the performance of the cw laser diodes on silicon by incorporating compressive strain in the quantum well active regions, improving material quality, and reducing residual "bulk" layer strains. The collaboration with Professor Carl Thompson in the Department of Materials Science and Engineering on the initial stages of nucleation and on the development of improved growth techniques will be continued. Preliminary work on selective area epitaxy will be conducted, and an active collaboration with colleagues in the silicon-oriented MIT Microsystems Technology Laboratory will be established to develop a growth sequence which is compatible with their BICMOS process.