Integration of GaAlAs Heterostructure Optoelectronics on Si Integrated Circuits for High Speed Interfaces and Interconnects

这项为期一年的研究工作建立在过去在NSF的支持下，GaA1As异质结构在Si上的分子束外延取得的进展之上。它将专注于通过在量子阱活性区加入压缩应变来改善硅上的连续波激光二极管的性能，改善材料质量，并减少残余的“体”层应变。将继续同材料科学和工程系的卡尔·汤普森教授就成核的最初阶段和发展改进的生长技术进行合作。将进行选择性区域外延的初步工作，并与麻省理工学院硅取向微系统技术实验室的同事积极合作，开发与BICMOS工艺兼容的生长序列。

This one-year research effort builds on past advances in the molecular beam epitaxy of GaA1As heterostructures on Si achieved under previous NSF support. It will concentrate on improving the performance of the cw laser diodes on silicon by incorporating compressive strain in the quantum well active regions, improving material quality, and reducing residual "bulk" layer strains. The collaboration with Professor Carl Thompson in the Department of Materials Science and Engineering on the initial stages of nucleation and on the development of improved growth techniques will be continued. Preliminary work on selective area epitaxy will be conducted, and an active collaboration with colleagues in the silicon-oriented MIT Microsystems Technology Laboratory will be established to develop a growth sequence which is compatible with their BICMOS process.