Integration of GaAlAs Heterostructure Optoelectronics on Si Integrated Circuits for High Speed Interfaces and Interconnects

用于高速接口和互连的 GaAlAs 异质结构光电器件在 Si 集成电路上的集成

• 批准号: 8807496
• 负责人: Clifton Fonstad
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-11-01 至 1990-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8807496&HistoricalAwards=false
• 关键词: Integration; GaAlAs; Heterostructure; Optoelectronics; Si

This one-year research effort builds on past advances in the molecular beam epitaxy of GaA1As heterostructures on Si achieved under previous NSF support. It will concentrate on improving the performance of the cw laser diodes on silicon by incorporating compressive strain in the quantum well active regions, improving material quality, and reducing residual "bulk" layer strains. The collaboration with Professor Carl Thompson in the Department of Materials Science and Engineering on the initial stages of nucleation and on the development of improved growth techniques will be continued. Preliminary work on selective area epitaxy will be conducted, and an active collaboration with colleagues in the silicon-oriented MIT Microsystems Technology Laboratory will be established to develop a growth sequence which is compatible with their BICMOS process.

这项为期一年的研究工作建立在过去 NSF 支持下在硅上 GaA1As 异质结构分子束外延方面取得的进展的基础上。 它将专注于通过在量子阱有源区域中加入压缩应变、提高材料质量并减少残余“体”层应变来提高硅上连续激光二极管的性能。 与材料科学与工程系卡尔·汤普森教授在成核初始阶段和改进生长技术开发方面的合作将继续下去。 将开展选择性区域外延的初步工作，并将与面向硅的麻省理工学院微系统技术实验室的同事建立积极的合作，以开发与其 BICMOS 工艺兼容的生长序列。