Quantum Tunnel Optical Detectors, Modulators, and Sources New Devices for Ultra-High Speed OEIC's
Quantum Tunnel Optical Detectors, Modulators, and Sources New Devices for Ultra-High Speed OEIC's
批准号:
9008485
负责人:
Clifton Fonstad
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing grant
财政年份:
1990
资助国家:
美国
项目状态:
已结题
起止时间:
1990-09-01 至 1994-02-28
中文摘要
一个为期三年的研究计划是 根据新的多数类别提出 载波光电子器件 一种新的技术 用于电接触 InAs深量子阱 赝晶AlAs/InAs/InGaAs 共振隧穿二极管 异质结构 这些激进的新 所有设备都在子带间工作 电子跃迁之间的 导带能级 InAs量子阱与隧道效应 电子进出 相同的量子阱;它们代表了 国家的重大进步 艺术。 建议在隧道上施工 注入式量子阱激光器 2-5 um区域的二极管; on 亚皮秒量子阱能级, 隧道势垒红外光电二极管; 在超快量子阱能级上, 隧道势垒光电 调制器和非线性光学 件.
英文摘要
A three year program of research is proposed on a new class of majority carrier optoelectronic devices based on a recently developed technique for making electrical contact to the deep InAs quantum well in pseudomorphic AlAs/InAs/InGaAs resonant tunnelling diode heterostructures. These radical new devices all operate on intersubband electronic transitions between the conduction band levels of a single InAs quantum well and on tunnelling of electrons into and out of the same quantum well; they represent a major advance in the state-of-the- art-. Work is proposed on tunnel injection, quantum well level laser diodes for the 2-5 um region; on sub-picosecond quantum well level, tunnel barrier infrared photodiodes; and on ultrafast quantum well level, tunnel barrier optoelectronic modulators and non-linear optical components.
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Collaborative Research on Monolithic Optoelectronic Integrated Circuits for Biomedical Sensing Applications
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批准号:0118130
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Clifton Fonstad
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依托单位:
Intersubband Optoelectronic Devices in the 1.55um Range
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批准号:9408155
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项目类别:Continuing grant
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资助金额:$0.0万
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财政年份:1994
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负责人:Clifton Fonstad
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依托单位:
Engineering Research Equipment Grant: Chamber for UHV and Cleaning of III-V Semiconductors
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批准号:9007745
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:1990
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负责人:Clifton Fonstad
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依托单位:
Integration of GaAlAs Heterostructure Optoelectronics on Si Integrated Circuits for High Speed Interfaces and Interconnects
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批准号:8807496
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:1988
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负责人:Clifton Fonstad
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依托单位:
(Ga,A1)As Optoelectronics on Oxidized Silicon Wafers for High Speed IC Optical Interconnect
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批准号:8413178
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项目类别:Continuing Grant
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资助金额:$26.32万
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财政年份:1985
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负责人:Clifton Fonstad
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依托单位:
Industry/Universtiy Cooperative Research Activity: Phase Equilibria and LPE Growth of PB-SN-TE-SE Near The PBSE Binary Corner
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批准号:8404047
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项目类别:Continuing grant
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资助金额:$0.0万
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财政年份:1984
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负责人:Clifton Fonstad
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依托单位:
Quaternary Heterojunction Phototransistors at 1.3 Microns
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批准号:7914179
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:1979
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负责人:Clifton Fonstad
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依托单位:
Heterostructure Near-Infrared Detectors, Light Emitters and Photocathodes
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批准号:7609586
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:1976
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负责人:Clifton Fonstad
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依托单位:
海外基金