Quantum Tunnel Optical Detectors, Modulators, and Sources New Devices for Ultra-High Speed OEIC's

一个为期三年的研究计划是 根据新的多数类别提出 载波光电子器件 一种新的技术 用于电接触 InAs深量子阱 赝晶AlAs/InAs/InGaAs 共振隧穿二极管 异质结构 这些激进的新 所有设备都在子带间工作 电子跃迁之间的 导带能级 InAs量子阱与隧道效应 电子进出 相同的量子阱;它们代表了 国家的重大进步 艺术。 建议在隧道上施工 注入式量子阱激光器 2-5 um区域的二极管; on 亚皮秒量子阱能级， 隧道势垒红外光电二极管; 在超快量子阱能级上， 隧道势垒光电 调制器和非线性光学 件.

A three year program of research is proposed on a new class of majority carrier optoelectronic devices based on a recently developed technique for making electrical contact to the deep InAs quantum well in pseudomorphic AlAs/InAs/InGaAs resonant tunnelling diode heterostructures. These radical new devices all operate on intersubband electronic transitions between the conduction band levels of a single InAs quantum well and on tunnelling of electrons into and out of the same quantum well; they represent a major advance in the state-of-the- art-. Work is proposed on tunnel injection, quantum well level laser diodes for the 2-5 um region; on sub-picosecond quantum well level, tunnel barrier infrared photodiodes; and on ultrafast quantum well level, tunnel barrier optoelectronic modulators and non-linear optical components.