Quantum Tunnel Optical Detectors, Modulators, and Sources New Devices for Ultra-High Speed OEIC's

提出了一项为期三年的研究计划，该计划基于最近开发的在伪晶中与深InAs量子阱进行电接触的技术，研究一类新的多数载流子光电器件AlAs/InAs/InGaAs共振隧穿二极管异质结构。这些激进的新器件都是在单个InAs量子阱的传导带能级之间的子带间电子跃迁以及电子进出同一量子阱的隧穿上工作的；它们代表了最先进技术的重大进步。提出了隧道注入、量子阱级激光二极管在2-5 um区域的工作；在亚皮秒量子阱水平上，隧道势垒红外光电二极管；在超快量子阱水平，隧道势垒光电调制器和非线性光学元件。

A three year program of research is proposed on a new class of majority carrier optoelectronic devices based on a recently developed technique for making electrical contact to the deep InAs quantum well in pseudomorphic AlAs/InAs/InGaAs resonant tunnelling diode heterostructures. These radical new devices all operate on intersubband electronic transitions between the conduction band levels of a single InAs quantum well and on tunnelling of electrons into and out of the same quantum well; they represent a major advance in the state-of-the- art-. Work is proposed on tunnel injection, quantum well level laser diodes for the 2-5 um region; on sub-picosecond quantum well level, tunnel barrier infrared photodiodes; and on ultrafast quantum well level, tunnel barrier optoelectronic modulators and non-linear optical components.