Quantum Tunnel Optical Detectors, Modulators, and Sources New Devices for Ultra-High Speed OEIC's

用于超高速 OEIC 的量子隧道光学探测器、调制器和光源新器件

• 批准号: 9008485
• 负责人: Clifton Fonstad
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-09-01 至 1994-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9008485&HistoricalAwards=false
• 关键词: Quantum; Tunnel; Optical; Detectors; Modulators

A three year program of research is proposed on a new class of majority carrier optoelectronic devices based on a recently developed technique for making electrical contact to the deep InAs quantum well in pseudomorphic AlAs/InAs/InGaAs resonant tunnelling diode heterostructures. These radical new devices all operate on intersubband electronic transitions between the conduction band levels of a single InAs quantum well and on tunnelling of electrons into and out of the same quantum well; they represent a major advance in the state-of-the- art-. Work is proposed on tunnel injection, quantum well level laser diodes for the 2-5 um region; on sub-picosecond quantum well level, tunnel barrier infrared photodiodes; and on ultrafast quantum well level, tunnel barrier optoelectronic modulators and non-linear optical components.

提出了一项为期三年的研究计划，基于最近开发的一种使大多数载流子与半导体器件电接触的技术，开发了一种新型的多数载流子光电器件。赝态AlAs/InAs/InGaAs共振隧穿二极管异质结中的深InAs量子阱。这些激进的新器件都工作在单个InAs量子阱的导带能级之间的子带间电子跃迁和隧道效应上电子流入和流出同一量子井；它们代表着最先进的技术的重大进步。提出了用于2-5微米区域的隧道注入、量子井级激光二极管、亚皮秒量子井级、隧道势垒红外光电二极管；在超快量子阱水平上，隧道势垒光电调制器和非线性光学元件。