Engineering Research Equipment Grant: Chamber for UHV and Cleaning of III-V Semiconductors

提出了采用多种技术组装柔性超高真空（UHV）腔，用于III-V异质结构的原位蚀刻和清洗。包括由首席研究员与化学与化学工程系的同事合作开发的一种独特的无损伤超音速光束工艺。该腔室将连接到现有的分子束外延系统上，将由首席研究员和他在电气工程和计算机科学系的同事们用于高性能电子、光电、光子、量子器件和集成系统。除了设计用于在特高压环境中蚀刻和清洁外，该系统还设计用于使研究人员能够在生长系统外掩膜，蚀刻，图案和/或以其他方式处理III-V异质结构；将它们送回特高压生长环境；然后清洗、蚀刻和准备它们的表面，以进一步生长MBE。它还包括在制备的表面涂覆砷的规定，以保护它们在随后的转移和储存在多室生长系统中，以及在从系统中移除时免受污染。

It is proposed to assemble a flexible ultra- high vacuum (UHV) chamber for in-situ etching and cleaning of III-V heterostructures by a variety of techniques, including a unique damage-free supersonic beam process under development by the principal investigator in collaboration with colleagues in the Department of Chemistry and Chemical Engineering. The chamber, which is to be attached to an existing molecular beam epitaxy system, will be used by the principal investigator and his colleagues in the Department of Electrical Engineering and Computer Science research on high performance electronic, opto-electronic, photonic, and quantum devices and integrated systems. In addition to being designed for etching and cleaning inside the UHV environment, this system is designed to enable researchers to mask, etch, pattern, and/or otherwise process III-V heterostructures outside the growth system; to return them to the UHV growth environment; and to then clean, etch, and prepare their surfaces for further MBE growth. It furthermore includes provision to coat the prepared surfaces with arsenic to protect them from contamination during subsequent transfer and storage within the multi-chamber growth system, as well as during removal from the system.