Electromigration and Current Noise in Aluminum Based Thin Conductors

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Electromigration in Al-based thin films has become an important subject of study because these films are widely used for metal interconnections in VLSI circuits and are required to carry high current densities for circuit operation. Recent experiments show that current (1/f) noise measurements can be used as a sensitive tool for detecting electromigration damage and for predicting the mean time to failure (MTF) of the films. To develop this new tool for studying electromigration in VLSI circuits, the current noise of various Al-based thin films which have been used in VLSI circuits will be investigated. This will be done by measuring the temperature and current dependence of 1/f noise of these films in different ambients, including hydrogen and inert gas ambients. Systematic measurements will be made to relate the 1/f noise, electromigration damage, and the MTF of the films. More information about the kinetics of electromigration damage can be obtained from these measurements. This study will give information for developing a new technique for predicting electromigration damage in VLSI circuits.