Dark current and noise mechanisms in nBn HgCdTe infrared detectors

nBn HgCdTe 红外探测器中的暗电流和噪声机制

• 批准号: DP150104839
• 负责人: A/Prof Jarek Antoszewski
• 金额: $ 23.1万
• 依托单位: The University of Western Australia
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2015
• 资助国家: 澳大利亚
• 起止时间: 2015-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP150104839
• 关键词: Dark; current; noise; mechanisms; nBn

Novel mercury cadmium telluride (HgCdTe) nBn (two n-type semiconductors sandwiching a barrier layer) infrared (IR) detectors are theoretically capable of operating at higher temperatures than conventional IR detectors. Their reduced cooling requirements lead to reductions in the size, weight and power of IR imaging systems without loss in IR detection performance. Unfortunately, HgCdTe nBn detectors are currently affected by non-ideal dark current and noise levels whose physical origins and nature are poorly understood. The proposed experimental and theoretical investigations and optimisations are anticipated to minimise such non-idealities and thus enable the demonstration of HgCdTe nBn IR detectors capable of revolutionising portable IR detection systems for security and rescue applications.

新型碲镉汞（HgCdTe）nBn（两个n型半导体，包括一个阻挡层）红外（IR）探测器理论上能够在比传统的IR探测器更高的温度下工作。它们降低的冷却要求导致IR成像系统的尺寸、重量和功率的减小，而不损失IR检测性能。不幸的是，HgCdTe nBn探测器目前受到非理想暗电流和噪声水平的影响，其物理起源和性质知之甚少。拟议的实验和理论研究和优化预计将尽量减少这种非理想性，从而使HgCdTe nBn红外探测器的演示能够彻底改变便携式红外探测系统的安全和救援应用。