Research Initiation: Study of Subthreshold Laser Illuminat-ion Effects in Solids Using Raman Scattering

研究启动：利用拉曼散射研究固体中的亚阈值激光照射离子效应

• 批准号: 8504202
• 负责人: Philippe Fauchet
• 金额: $ 6.78万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1985
• 资助国家: 美国
• 起止时间: 1985-06-01 至 1987-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8504202&HistoricalAwards=false
• 关键词: Research; Initiation; Study; Subthreshold; Laser

Raman scattering will be used to observe and characterize gradual structural changes in solids during repeated illumination by picosecond pulses. By detecting the shift, broadening, and lineshape changes of the Stokes line with an accuracy of + 0.1 cm-1, the accumulation of plastic strains and the formation of microcrystallites will be readily detected. Other candidates to explain the precursors will also affect the Stokes line. These experiments will first be performed in disordered and crystalline semiconductors (bulk or thin film), then extended to other materials, such as those used in optical coatings. The results will be compared to existing models, and the nature of the precursors will be established.

拉曼散射将被用来观察和表征在皮秒脉冲重复照射下固体结构的逐渐变化。通过检测斯托克斯线的移动、加宽和线形变化，精度为+0.1厘米-1，可以很容易地检测到塑性应变的积累和微晶的形成。其他候选人解释的前兆也会影响斯托克斯线。这些实验将首先在无序和结晶半导体(块状或薄膜)中进行，然后扩展到其他材料，如用于光学涂层的那些材料。结果将与现有的模型进行比较，并将确定前体的性质。