Research Initiation: Study of Subthreshold Laser Illuminat-ion Effects in Solids Using Raman Scattering

拉曼散射将用于观察和表征渐变的 皮秒重复照射时固体的结构变化 脉搏 通过检测的位移，增宽，和线形的变化， Stokes线的精度为± 0.1 cm-1， 塑性应变和微晶的形成将很容易 检测到 其他考生解释的前兆也会影响 斯托克斯线。 这些实验将首先在 无序和晶体半导体（块状或薄膜），然后 扩展到其他材料，如用于光学涂层的材料。 结果将与现有的模型进行比较， 将建立前体。

Raman scattering will be used to observe and characterize gradual structural changes in solids during repeated illumination by picosecond pulses. By detecting the shift, broadening, and lineshape changes of the Stokes line with an accuracy of + 0.1 cm-1, the accumulation of plastic strains and the formation of microcrystallites will be readily detected. Other candidates to explain the precursors will also affect the Stokes line. These experiments will first be performed in disordered and crystalline semiconductors (bulk or thin film), then extended to other materials, such as those used in optical coatings. The results will be compared to existing models, and the nature of the precursors will be established.