PYI: Ultrafast Optics and Electronics with Semiconductors

PYI：超快光学和电子与半导体

• 批准号: 8657263
• 负责人: Philippe Fauchet
• 金额: $ 19.32万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-06-01 至 1990-09-01
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8657263&HistoricalAwards=false
• 关键词: PYI; Ultrafast; Optics; Electronics; Semiconductors

Picosecond and femtosecond laser pulses will be used to study ultrafast optical and electronic processes in semiconductors. Three projects will be supported by the PYI program. Nucleation processes and superheating of Si after illumination with a ps high power laser pulse will be studied by time-resolved spectroscopy techniques. Hot carrier relaxation in the extended states, carrier trapping across the mobility edge and thermalization in the bandtail states will be investigated by femtosecond spectroscopy in a-Si:H and related alloys. Picosecond electrical pulses will be produced using the Auston switch technology. The transient response of III-V semiconductor superlattices to these pulses will be investigated theoretically. Emphasis will be put on the variations of the optical properties.

皮秒和飞秒激光脉冲将用于研究半导体中的超快光学和电子过程。三个项目将得到PYI计划的支持。用时间分辨光谱技术研究了在ps高功率激光脉冲照射下，硅的成核过程和过热过程。我们将用飞秒光谱研究a-Si：H及相关合金中扩展态的热载流子弛豫、跨迁移率边缘的载流子俘获以及带尾态的热化。皮秒电脉冲将使用Auston Switch技术产生。我们将从理论上研究III-V半导体超晶格对这些脉冲的瞬时响应。重点讨论了其光学性质的变化。