PYI: Ultrafast Optics and Electronics with Semiconductors

皮秒和飞秒激光脉冲将用于研究 半导体中的超快光学和电子过程。 三 项目将得到保华计划的支持。 光照后Si的形核过程和过热 用时间分辨的方法研究了ps高功率激光脉冲的 光谱技术。 热载流子弛豫在扩展状态，载流子捕获 穿过迁移率边缘和带尾状态中的热化将 在a-Si：H和相关的飞秒光谱研究 合金.皮秒电脉冲将使用奥斯顿 交换机技术 III-V族半导体的瞬态响应 将从理论上研究这些脉冲的超晶格。 重点将放在光学性质的变化。

Picosecond and femtosecond laser pulses will be used to study ultrafast optical and electronic processes in semiconductors. Three projects will be supported by the PYI program. Nucleation processes and superheating of Si after illumination with a ps high power laser pulse will be studied by time-resolved spectroscopy techniques. Hot carrier relaxation in the extended states, carrier trapping across the mobility edge and thermalization in the bandtail states will be investigated by femtosecond spectroscopy in a-Si:H and related alloys. Picosecond electrical pulses will be produced using the Auston switch technology. The transient response of III-V semiconductor superlattices to these pulses will be investigated theoretically. Emphasis will be put on the variations of the optical properties.