PYI: Ultrafast Optics and Electronics with Semiconductors

皮秒和飞秒激光脉冲将用于研究半导体中的超快光学和电子过程。PYI计划将支持三个项目。利用时间分辨光谱技术研究了高功率激光脉冲照射后Si的成核过程和过热现象。本文将利用飞秒光谱技术研究a-Si:H及相关合金中扩展态的热载流子弛豫、迁移边缘的载流子捕获和带尾态的热化。皮秒电脉冲将使用奥斯汀开关技术产生。我们将从理论上研究III-V型半导体超晶格对这些脉冲的瞬态响应。重点将放在光学性质的变化。

Picosecond and femtosecond laser pulses will be used to study ultrafast optical and electronic processes in semiconductors. Three projects will be supported by the PYI program. Nucleation processes and superheating of Si after illumination with a ps high power laser pulse will be studied by time-resolved spectroscopy techniques. Hot carrier relaxation in the extended states, carrier trapping across the mobility edge and thermalization in the bandtail states will be investigated by femtosecond spectroscopy in a-Si:H and related alloys. Picosecond electrical pulses will be produced using the Auston switch technology. The transient response of III-V semiconductor superlattices to these pulses will be investigated theoretically. Emphasis will be put on the variations of the optical properties.