Engineering Research Equipment Grant: A Colliding Pulse Modelocked Femtosecond Dye laser for Ultrafast Electronics and Device Studies

这笔设备赠款将用于建造一个碰撞脉冲 锁模（CPM）染料激光器系统，包括振荡器和 增幅器 该装置能产生短于100的脉冲， 飞秒将使PI能够研究基本的电子 允许或限制亚皮秒操作的过程，并开发 测试超快电子学的新概念 的势头和 半导体中热载流子的能量弛豫时间是一个关键因素， 物理参数和设备参数。 松弛时间通常是 不太为人所知，但认为其在100fs和10ps之间。 量子威尔斯阱和非晶中的各种弛豫过程 半导体将在各种条件下直接测量 （掺杂、注入载流子密度、晶格温度）。 这些结果 将与正在进行的实验和理论研究相结合， 努力 超短电脉冲的传播也将是 用于瞬态传输的研究，包括速度过冲， 在半导体中。 量子阱光学器件的电输出 探测器将与飞秒脉冲的帮助下进行研究。

This equipment grant will be used for construction of a colliding pulse modelocked (CPM) dye laser system, consisting of an oscillator and amplifier. This apparatus which can generate pulses shorter than 100 femtoseconds will enable the PIs to study the fundamental electronic processes that allow or limit subpicosecond operation, and to develop and test new concepts in ultrafast electronics. The momentum and energy relaxation time of hot carriers in semiconductors is a critical parameter in physics and for devices. The relaxation time is usually not very well known but it is thought to be between 100fs and 10ps. The various relaxation process in quantum wells and amorphous semiconductors will be directly measured under a variety of conditions (doping, injected carrier density, lattice temperature). These results will be combined with those of ongoing experimental and theoretical effort. The propagation of ultrashort electrical pulses will also be used in a study of transient transport, including velocity overshoot, in semiconductors. The electrical output of a quantum well optical detector will be studied with the help of femtosecond pulses.