Engineering Research Equipment Grant: A Colliding Pulse Modelocked Femtosecond Dye laser for Ultrafast Electronics and Device Studies

这笔设备赠款将用于建造碰撞脉冲锁模(CPM)染料激光系统，该系统由振荡器和放大器组成。这台可以产生短于100飞秒的脉冲的装置将使PI能够研究允许或限制亚皮秒操作的基本电子过程，并开发和测试超快电子学的新概念。半导体中热载流子的动量和能量弛豫时间是物理和器件中的一个重要参数。驰豫时间通常不是很清楚，但人们认为它在100fps到10ps之间。在各种条件下(掺杂、注入载流子密度、晶格温度)，可以直接测量量子阱和非晶态半导体中的各种弛豫过程。这些结果将与正在进行的实验和理论工作相结合。超短电脉冲的传播也将用于研究半导体中的瞬变输运，包括速度过冲。我们将在飞秒脉冲的帮助下研究量子井光探测器的电输出。

This equipment grant will be used for construction of a colliding pulse modelocked (CPM) dye laser system, consisting of an oscillator and amplifier. This apparatus which can generate pulses shorter than 100 femtoseconds will enable the PIs to study the fundamental electronic processes that allow or limit subpicosecond operation, and to develop and test new concepts in ultrafast electronics. The momentum and energy relaxation time of hot carriers in semiconductors is a critical parameter in physics and for devices. The relaxation time is usually not very well known but it is thought to be between 100fs and 10ps. The various relaxation process in quantum wells and amorphous semiconductors will be directly measured under a variety of conditions (doping, injected carrier density, lattice temperature). These results will be combined with those of ongoing experimental and theoretical effort. The propagation of ultrashort electrical pulses will also be used in a study of transient transport, including velocity overshoot, in semiconductors. The electrical output of a quantum well optical detector will be studied with the help of femtosecond pulses.