Microwave Properties of Magnetic-Semiconductor Layers

磁半导体层的微波特性

• 批准号: 8601661
• 负责人: Carmine Vittoria
• 金额: $ 3.72万
• 依托单位: Northeastern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-11-15 至 1988-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8601661&HistoricalAwards=false
• 关键词: Microwave; Properties; Magnetic; Semiconductor; Layers

This effort deals with the effort to develop idealized magnetic-semiconductor layered structures. At the Naval Research Laboratory the technique of molecular bean epitaxy will be deployed in evaporating single crystal iron films on substrates of Ga1-xInxAs. For this combination of materials the lattice constant mismatch between substrate and film is zero or relatively small. For these growth conditions magnetic interfacial effects as manifested in microwave measurements depend solely on intrinsic magnetic surfaces processes. In particular the PI may be able for the first time to measure the intrinsic uniaxial magnetic surface anisotropy parameter in iron. Besides this parameter, other instrinsic magnetic parameters (magnetic relaxation, exchange-stiffness constant, cubic magnetic anisotropy...) will be measured. These measurements will be compared with well known theories. Physical understanding of intrinsic interfacial effects in idealized magnetic-semiconductor layers should form a strong basis in producing new artificial multilayered structures, such as magnetic superlattices.

这项工作涉及开发理想化的磁性半导体层状结构的努力。在海军研究实验室，分子豆外延技术将用于在Ga1-xInxAs衬底上蒸发单晶铁薄膜。对于这种材料组合，基片和薄膜之间的晶格常数失配为零或相对较小。对于这些生长条件，微波测量中所显示的磁性界面效应完全取决于本征磁性表面过程。特别是，PI可能首次能够测量铁的本征单轴磁表面各向异性参数。除此参数外，其他固有磁性参数(磁弛豫、交换刚度常数、立方磁各向异性……)将会被测量。这些测量结果将与众所周知的理论进行比较。对理想化磁性半导体层中本征界面效应的物理理解应该为制造新的人工多层结构(如磁性超晶格)奠定坚实的基础。