Microwave Properties of Magnetic-Semiconductor Layers

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This effort deals with the effort to develop idealized magnetic-semiconductor layered structures. At the Naval Research Laboratory the technique of molecular bean epitaxy will be deployed in evaporating single crystal iron films on substrates of Ga1-xInxAs. For this combination of materials the lattice constant mismatch between substrate and film is zero or relatively small. For these growth conditions magnetic interfacial effects as manifested in microwave measurements depend solely on intrinsic magnetic surfaces processes. In particular the PI may be able for the first time to measure the intrinsic uniaxial magnetic surface anisotropy parameter in iron. Besides this parameter, other instrinsic magnetic parameters (magnetic relaxation, exchange-stiffness constant, cubic magnetic anisotropy...) will be measured. These measurements will be compared with well known theories. Physical understanding of intrinsic interfacial effects in idealized magnetic-semiconductor layers should form a strong basis in producing new artificial multilayered structures, such as magnetic superlattices.