Studies of Optical Microlithographic Processes

光学微光刻工艺的研究

• 批准号: 8611298
• 负责人: S. Babu
• 金额: $ 27.6万
• 依托单位: Clarkson University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-11-15 至 1991-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8611298&HistoricalAwards=false
• 关键词: Studies; Optical; Microlithographic; Processes

This proposal seeks support for the PIs studies on microlithographic processes. A new set of exposure bleaching model equations, applicable when standing wave effects are present and non-negligible are being developed. The ray-tracing model for resist dissolution will be formulated in terms of path integrals and exact differentials to yield the developed line contours in closed forms. Analytical solutions derived earlier for the image reversal and CEL processes will be convoluted with the exact formulation of the dissolution process. Multi-level resist processes will be explored by explicitly considering thickness non-uniformities and various interface reflectivities. Deep UV induced image stabilization and hardening in positive resists will be studied by relating measured optical density changes and cross link gradients in the resist film. Finally, the extended exposure-bleaching models of Ag-doped Ge Se resists will be studied and the resolution capability of these inorganic resists investigated.

这项建议旨在支持研究所对微光刻的研究 流程. 一套新的曝光漂白模型方程，适用于 当驻波效应存在且不可忽略时， 开发 抗蚀剂溶解的射线跟踪模型将是 用路径积分和精确微分来表示， 以封闭形式展开的线条轮廓。 解析解 先前针对图像反转和CEL过程导出的将是 与溶解过程的精确公式相混淆。 多层次的抗蚀剂工艺将探讨明确考虑 厚度不均匀性和各种界面反射率。 深 在正性抗蚀剂中UV诱导的图像稳定和硬化将 通过将测量的光密度变化和交联 抗蚀剂膜中的梯度。 最后，延长的漂白 银掺杂锗硒抗蚀剂的模型将进行研究和分辨率 研究了这些无机抗蚀剂的性能。