Supercomputer Study of New Device Concepts Utilizing Quantum Mechanical Effects & the Superlattice Technology

利用量子力学效应的新设备概念的超级计算机研究

• 批准号: 8612163
• 负责人: Cheng Wang
• 金额: $ 0.5万
• 依托单位: California State University-Long Beach
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-06-15 至 1987-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8612163&HistoricalAwards=false
• 关键词: Supercomputer; Study; New; Device; Concepts

This is a study of superlattice device behavior using a supercomputer. A New set of semiconductor equations which was proposed by the author will be used to investigate the effects of velocity overshoot, finite intracollision duration, boundary conditions, tunneling, energy quantization and hot electrons on the current transport in these devices. The high electron mobility transistor (HEMT) will be analyzed first and the results will be compared with those of other devices such as HBT's, THETA's, devices with different composition of A1, and devices using different materials other than GaAs.

这是一项使用超级计算机研究超晶格器件行为的研究。利用作者提出的一组新的半导体方程，研究了速度过冲、有限内碰撞持续时间、边界条件、隧穿、能量量子化和热电子对这些器件中电流输运的影响。首先对高电子迁移率晶体管(HEMT)进行了分析，并将其结果与HBT、Theta、不同成分Al的器件以及使用不同材料的器件(不同于GaAs)的结果进行了比较。