Laser-Assisted Epitaxial Growth of II-VI Compound Semiconductors

这是一个关于激光辅助化学气相沉积(LA-CVD)用于II-VI化合物半导体外延生长的研究项目。重点将放在锌硒上，它有几个重要的光电子器件应用。通过源材料的选择性激发和光解离，LA-CVD应该允许比传统技术更低的生长温度和更好的化学计量比控制。较低的温度可能对发展生长器件质量的II-VI半导体晶体的技术特别重要。研究计划的第一年将致力于证明LA-CVD是一种可行的方法，通过确定成功外延沉积的重要参数和技术来生长有用质量的ZnSe。在第二年和第三年，将建立生长过程的定量动力学和质量传输模型。将对薄膜的结构和电学特性进行详细的表征，以便将生长条件与电学特性相关联。该计划的最终目标是开发一种提高器件质量的技术，并用这种材料制作工作的p-n结。

This is a research program on the development of laser-assisted chemical vapor deposition (LA-CVD) for the epitaxial growth of II-VI compound semiconductors. Focus will be on ZnSe, which has several important optoelectronic device applications. LA-CVD should allow lower growth temperatures and better Stoichiometric control than conventional techniques, through selective excitation and photodissociation of source materials. Lower temperatures may be particularly important for the development of techniques for the growth of device-quality II-VI semiconductor crystals. The first year of the research program will be devoted to demonstrating that LA-CVD is a viable method for growing ZnSe of useful quality by determining the important parameters and techniques for successful epitaxial deposition. In the second and third years, quantitative kinetic and mass transport models of the growth process will be developed. Detailed characterization of the structual and electrical properties of the films will be made in order to correlate growth conditions with electrical characteristics. The ultimate goal of this program is to develop a technique for the growth of device quality ZnSe and to fabricate working p-n junction from this material.