Laser-Assisted Epitaxial Growth of II-VI Compound Semiconductors

II-VI 族化合物半导体的激光辅助外延生长

• 批准号: 8612752
• 负责人: William Wilson
• 金额: --
• 依托单位: William Marsh Rice University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-09-01 至 1990-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8612752&HistoricalAwards=false
• 关键词: Laser; Assisted; Epitaxial; Growth; II

This is a research program on the development of laser-assisted chemical vapor deposition (LA-CVD) for the epitaxial growth of II-VI compound semiconductors. Focus will be on ZnSe, which has several important optoelectronic device applications. LA-CVD should allow lower growth temperatures and better Stoichiometric control than conventional techniques, through selective excitation and photodissociation of source materials. Lower temperatures may be particularly important for the development of techniques for the growth of device-quality II-VI semiconductor crystals. The first year of the research program will be devoted to demonstrating that LA-CVD is a viable method for growing ZnSe of useful quality by determining the important parameters and techniques for successful epitaxial deposition. In the second and third years, quantitative kinetic and mass transport models of the growth process will be developed. Detailed characterization of the structual and electrical properties of the films will be made in order to correlate growth conditions with electrical characteristics. The ultimate goal of this program is to develop a technique for the growth of device quality ZnSe and to fabricate working p-n junction from this material.

这是一个关于激光辅助发展的研究项目 用于II-VI族外延生长的化学气相沉积（LA-CVD） 化合物半导体 重点将放在ZnSe，它有几个 重要的光电器件应用。 LA-CVD应允许 更低的生长温度和更好的化学计量控制， 常规技术，通过选择性激发， 源材料的光解离。 低温可能是 对于发展用于生长的技术特别重要， 器件级II-VI族半导体晶体 的第一年 研究计划将致力于证明LA-CVD是一种 一种生长有用质量的ZnSe的可行方法， 成功外延的重要参数和技术 证词 在第二年和第三年， 将建立生长过程的质量输运模型。 详细表征的结构和电气性能的 将制备膜以使生长条件与 电气特性 该计划的最终目标是 开发用于生长器件质量的ZnSe的技术， 用这种材料制造工作p-n结。