Expedited Award for Novel Research: Analytical Methods for VLSI Semiconductor Device Design

新颖研究加急奖：VLSI 半导体器件设计的分析方法

• 批准号: 8616886
• 负责人: Melvyn Berger
• 金额: $ 3万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-09-15 至 1988-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8616886&HistoricalAwards=false
• 关键词: Expedited; Award; Novel; Research; Analytical

The Principal Investigator proposes to carry out new mathematical analyses of the basic nonlinear partial differential equations and boundary conditions, that define the operation of a large class of VLSI semiconductor devices. The Principal Investigator proposes to utilize state of the art advances in the theory of nonlinear partial differential equations to create and analyze new procedures to handle problems in both two and (short channel) three spatial dimensions in device design without leading to the usual numerical divergences of conventional algorithms. Moreover, the Principal Investigator proposes to investigate analytically several new important effects that appear as the miniaturization process proceeds to chips at the submicron level (e.g. electronic instabilities, and parameter dependence), which seems to lead to bifurcation phenomena.

首席研究员建议进行新的数学 分析了基本非线性偏微分方程， 边界条件，它定义了大类超大规模集成电路的操作 半导体器件. 主要研究者建议利用 非线性偏微分方程理论的最新进展 微分方程的创建和分析新程序处理 在二维和（短通道）三维空间中的问题， 器件设计，而不会导致通常的数值分歧， 传统算法。 此外，首席研究员建议， 分析研究几个新的重要效应， 随着微型化工艺进行到亚微米级的芯片 (e.g.电子不稳定性和参数依赖性），这似乎 导致分叉现象。