Dynamics and Structural Order of Noncrystalline Semiconductors

薄膜非晶态固体的拉曼散射研究将被用来提供关于非晶态半导体的动力学和结构有序性的基本信息。拉曼研究将用于薄膜和超薄膜几何结构。这包括“修改的几何结构”，如界面、空洞、超小微晶和超薄膜岛状结构。研究了这些特殊几何构型对振动拉曼光谱的影响。这些实验利用拉曼散射增强方法，允许探索与这种配置相关的弱信号电平。超薄膜非晶态固体的生长将通过俄歇电子能谱和选定的扫描电子显微镜测量来监测。此外，还将在具有非晶态半导体、非晶锗和非晶硅的四面体配位体系的薄膜稀薄合金中进行拉曼散射测量，以获得关于非金属-金属转变中结构修改的信息。作为这些拉曼研究的补充，光学吸收和椭圆偏振光谱将测量电子态的变化。

The study of thin film amorphous solids by Raman scattering will be employed to provide basic information on the dynamics and structural order of noncrystalline semiconductors. Raman studies will be utilized in thin and ultrathin film geometries. This includes "modified geometries" such as interfaces, voids, ultrasmall microcrystals and in ultrathin film island configurations. Information about the effects of these special geometries on the vibrational Raman spectra are studied. These experiments utilize Raman scattering enhancement methods to allow weak signal levels associated with such configurations to be explored. The growth of ultrathin film amorphous solids will be monitored by Auger electron spectroscopy and selected scanning transmission electron microscopy measurements. Raman scattering measurements will additionally be employed in thin film dilute alloys with tetrahedrally coordinated systems of amorphous semiconductors amorphous germanium and amorphous silicon to obtain information about structural modifications in the nonmetal-metal transition. Complementing these Raman studies will be optical adsorption and spectroscopic ellipsometry measurements of changes in the electronic states.