Dynamics and Structural Order of Noncrystalline Semiconductors

非晶半导体的动力学和结构顺序

• 批准号: 8620391
• 负责人: Jeffrey Lannin
• 金额: $ 23.45万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-06-01 至 1990-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8620391&HistoricalAwards=false
• 关键词: Dynamics; Structural; Order; Noncrystalline; Semiconductors

The study of thin film amorphous solids by Raman scattering will be employed to provide basic information on the dynamics and structural order of noncrystalline semiconductors. Raman studies will be utilized in thin and ultrathin film geometries. This includes "modified geometries" such as interfaces, voids, ultrasmall microcrystals and in ultrathin film island configurations. Information about the effects of these special geometries on the vibrational Raman spectra are studied. These experiments utilize Raman scattering enhancement methods to allow weak signal levels associated with such configurations to be explored. The growth of ultrathin film amorphous solids will be monitored by Auger electron spectroscopy and selected scanning transmission electron microscopy measurements. Raman scattering measurements will additionally be employed in thin film dilute alloys with tetrahedrally coordinated systems of amorphous semiconductors amorphous germanium and amorphous silicon to obtain information about structural modifications in the nonmetal-metal transition. Complementing these Raman studies will be optical adsorption and spectroscopic ellipsometry measurements of changes in the electronic states.

薄膜非晶固体的拉曼散射研究将为非晶半导体的动力学和结构秩序提供基本信息。拉曼研究将用于薄膜和超薄膜几何。这包括“修改的几何形状”，如界面、空洞、超小微晶体和超薄膜岛状结构。研究了这些特殊几何形状对振动拉曼光谱的影响。这些实验利用拉曼散射增强方法来探索与这种配置相关的弱信号水平。超薄膜非晶固体的生长将通过俄歇电子能谱和选定的扫描透射电子显微镜测量来监测。此外，拉曼散射测量将用于薄膜稀释合金的非晶半导体、非晶锗和非晶硅的四面体配位系统，以获得有关非金属-金属过渡中结构修饰的信息。补充这些拉曼研究将是光学吸附和光谱椭偏测量在电子状态的变化。