Instrumentation for Process Monitoring of Plasma Etching

等离子蚀刻过程监控仪表

• 批准号: 8661031
• 负责人: Alan Stanton
• 金额: $ 4万
• 依托单位: Southwest Sciences Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-03-01 至 1987-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8661031&HistoricalAwards=false
• 关键词: Instrumentation; Process; Monitoring; Plasma; Etching

Plasma etching is one of the most important methods used for patterning of electronic materials and for fabrication of VLSI circuts. Critical to the understanding and further development of processes such as plasma etching is the availability of diagnostic tools that permit study and eventual monitoring or control of the process. This program will study the development of such instrumentation based on lead-salt diode laser absorption spectroscopy to monitor important gas phase species in the etching process. The major objective of the Phase I program is the investigation of sensitive new measurement techniques using diode lasers and the demonstration of these techniques to monitoring applications in plasma etching reactors. In particular, high frequency optical heterodyne techniques will be studied that should permit a significant simplification in the optical design of the system. The technique will be demonstrated by measurement of boron trichloride and its important decompositon products in a dc discharge. Results of the Phase I study will provide the required design information for the Phase II development of a compact instrument for on-line monitoring of plasma etching, plasma deposition, chemical vapor deposition, or other chemical process.

等离子体蚀刻是用于图案化的最重要的方法之一 电子材料和超大规模集成电路制造。关键 理解和进一步发展的过程，如 等离子体蚀刻是诊断工具的可用性， 研究并最终监控或控制过程。 这个程序 将研究开发基于铅盐的此类仪器 用于监测重要气相的二极管激光吸收光谱 蚀刻过程中的物种。第一阶段的主要目标 该计划是对敏感的新测量技术的研究 使用二极管激光器和这些技术的演示， 监控等离子体蚀刻反应器中的应用。 特别是， 将研究高频光外差技术， 应该允许在光学设计的显著简化 系统 该技术将通过测量硼来证明 在直流放电过程中，汞及其重要的分解产物。 I期研究的结果将提供所需的设计 第二阶段开发紧凑型仪器的信息， 在线监测等离子体刻蚀，等离子体沉积，化学气相 沉积或其它化学过程。