Inelastic Light Scattering Studies of Quantum-Layered Semiconductors and Metallic (Superconducting) Microstructures

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Modulated microstructures offer unique systems to investigate electronic and vibrational behavior under reduced dimensions. In this program, Raman and Brillouin scattering methods will be applied to a broad range of such semiconducting and metallic systems. Resonant Brillouin scattering experiments on semiconductor quantum layers focusses on elucidating the complex, yet important, valence subband structure. Quantitative estimates for several fundamental electron and lattice parameters of these ultra thin layers will be realized. Research on zinc arsenide epilayers, including structures grown on indium phosphide, that are a new and novel class of superlattices, provides exciting prospects for fundamental results. This thrust is also expected to have a significant impact on device applications, as for example long wavelength photonic devices. Interest in metallic superlattices is, primarily, understanding effects of structural anisotropy and tunable coherence lengths on electronic excitations in normal and superconducting states. The overall program also provides valuable structural and optical characterization that are valuable for improved fabrication of novel modulated systems.