Light Scattering from Strongly Perturbed Semiconductors

该研究项目正在开发一种新技术， 通过布里渊散射检测界面弹性波， 在几百摄氏度以下测量固体的体弹性常数。 静水压力的平方。 这种独特的能力将 允许调查几乎普遍软化的 立方半导体中的声压声子及其应用 结构相变的潜在作用。 上的测量 半导体合金和异质结构将允许隔离 成分和界面应变效应。 共振拉曼 散射将被用来研究交换介导的声子 重正化发现在钴基稀磁 半导体 安托赫II-V族半导体计划是 试图阐明的基本驱动机制， 在外延生长过程中， 通过应变稳定的可能性，否则不稳定 晶格

This research project is developing a new technique, based on the detection of interface elastic waves by Brillouin scattering, to measure the bulk elastic constants of solids under hundreds of kilobars of hydrostatic pressure. This unique capability will permit the investigation of the almost universal softening of acoustic phonons with pressure in cubic semiconductors and their potential role in structural phase transitions. Measurements on semiconductor alloys and heterostructures will allow isolation of compositional and interfacial strain effects. Resonant Raman scattering will be employed to study the exchange-mediated phonon renormalization discovered in cobalt-based dilute magnetic semiconductors. Antoher program on II-V semiconductors is attempting to elucidate the fundamental driving mechanism for their novel ordering during epitaxial growth and to explore the possibility to stabilize through strain otherwise unstable crystal lattices.