Metal Insulator Transition in Doped Semiconductors: Far Infrared & Transport Studies

通过联合输运和远红外光谱测量，研究了掺杂半导体中的磁场诱导金属绝缘体相变。输运测量将被用来确定金属绝缘体转变的临界场，并研究金属态的相互作用和弱局域效应以及绝缘态的激活电导。光谱测量将被用来研究远离费米能量的系统的电子结构。我们将研究金属态上的回旋共振和自旋共振信号到绝缘态中的杂质跃迁的转变。这些研究都是关于高速光电子学的重要材料。这个项目是普林斯顿大学的沙耶根教授和马里兰大学的德鲁教授共同努力的结果。这些研究涉及与高速光电子学有关的高技术重要性的材料。

The magnetic field induced metal insulator transition in doped semiconductors will be investigated by combined transport and far infrared spectroscopic measurements. The transport measurements will be used to determine the critical field for the metal insulator transition and to investigate interaction and weak localization effects in the metallic state and the activated conductance in the insulating state. The spectroscopic measurements will be used to investigate the electronic structure of the systems away from the Fermi energy. The transformation of the cyclotron resonance and spin resonance signals on the metallic state to the impurity transitions in the insulating state will be investigated. These studies are on materials of importance to high speed opto-electronics. This program is a collaborative effort between Professor Shayegan at Princeton Professor Drew at Maryland. These studies are on materials of high technological importance and related to high speed opto-electronics.