Dynamics of Radiation-Enhanced Etching Studies on Metals, Semiconductors and Silicides

金属、半导体和硅化物辐射增强蚀刻动力学研究

• 批准号: 8705680
• 负责人: Thor Rhodin
• 金额: $ 43.65万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-02-15 至 1993-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8705680&HistoricalAwards=false
• 关键词: Dynamics; Radiation; Enhanced; Etching; Studies

The objective of the research is to clarify dynamic factors in chemical processes, which are stimulated by radiation, related to plasma and reactive ion etching of metals, semiconductors, and silicides. New approaches will be used to study the fundamental mechanisms using time-of-flight and modulated beam mass spectroscopy, pulsed ion beams or tunable dye-pumped photon beams, combined with modulated neutral beams to examine the kinetics and dynamics of these surface reactions. Efforts will be made to separate the physical or thermal stimulated decomposition and desorption from quantum mechanical enhancement mechanisms. Chemical surface states induced by the radiation will be studied using Auger spectroscopy, x-ray photoelectron spectroscopy and thermal desorption spectroscopy to characterize the surfaces. The studies will emphasize the unique chemical and physical processes which distinguish etching reactions on compound surfaces from their respective elemental components. Dry etching processes such as reactive ion etching, plasma etching, and laser etching play an important role in semiconductor technology by precise control of anisotropy, selectivity, and etching rates required for highly integrated circuits. Energetic radiation (such as ion, electron, or photon radiation) plays a crucial role in these processes, and optimization of these reactions can be facilitated by an understanding of the effects of energetic radiation on the basic reaction mechanisms. This research seeks to increase fundamental understanding of these effects. In addition, students will be trained in the fundamental physics and chemistry of surface reactions, and will be prepared to contribute to research and development in the semiconductor industry.

研究的目的是为了阐明动力因素 在受辐射刺激的化学过程中， 涉及金属、半导体和半导体的等离子体和反应离子蚀刻， 硅化物。 新的方法将被用来研究基本的 使用飞行时间和调制束质量的机制 光谱学、脉冲离子束或可调谐染料泵浦光子 光束，结合调制中性束，以检查 这些表面反应的动力学和动力学。 努力将 使物理或热刺激分开 量子力学增强分解与解吸 机制等 辐射诱导的化学表面态 将使用俄歇光谱学、X射线光电子能谱 光谱和热脱附光谱来表征 表面。 这些研究将强调独特的化学物质， 区分蚀刻反应的物理过程 从它们各自的元素成分合成表面。 干法蚀刻工艺，例如反应离子蚀刻、等离子体蚀刻、 蚀刻和激光蚀刻在 通过精确控制各向异性的半导体技术， 选择性和高度集成所需的蚀刻速率 电路. 高能辐射（如离子、电子或光子 辐射）在这些过程中起着至关重要的作用， 这些反应的优化可以通过 了解高能辐射对基本 反应机理 这项研究旨在提高基础 了解这些影响。 此外，学生将 接受过基础物理学和表面化学的培训 反应，并将准备为研究和 半导体行业的发展。