Dynamics of Radiation-Enhanced Etching Studies on Metals, Semiconductors and Silicides

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The objective of the research is to clarify dynamic factors in chemical processes, which are stimulated by radiation, related to plasma and reactive ion etching of metals, semiconductors, and silicides. New approaches will be used to study the fundamental mechanisms using time-of-flight and modulated beam mass spectroscopy, pulsed ion beams or tunable dye-pumped photon beams, combined with modulated neutral beams to examine the kinetics and dynamics of these surface reactions. Efforts will be made to separate the physical or thermal stimulated decomposition and desorption from quantum mechanical enhancement mechanisms. Chemical surface states induced by the radiation will be studied using Auger spectroscopy, x-ray photoelectron spectroscopy and thermal desorption spectroscopy to characterize the surfaces. The studies will emphasize the unique chemical and physical processes which distinguish etching reactions on compound surfaces from their respective elemental components. Dry etching processes such as reactive ion etching, plasma etching, and laser etching play an important role in semiconductor technology by precise control of anisotropy, selectivity, and etching rates required for highly integrated circuits. Energetic radiation (such as ion, electron, or photon radiation) plays a crucial role in these processes, and optimization of these reactions can be facilitated by an understanding of the effects of energetic radiation on the basic reaction mechanisms. This research seeks to increase fundamental understanding of these effects. In addition, students will be trained in the fundamental physics and chemistry of surface reactions, and will be prepared to contribute to research and development in the semiconductor industry.