In Situ Direct Patterning of MBE Films Using Ion Assisted Etching
In Situ Direct Patterning of MBE Films Using Ion Assisted Etching
批准号:
8712666
负责人:
John Arthur
金额:
$4.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1988
资助国家:
美国
项目状态:
已结题
起止时间:
1988-09-15 至 1990-02-28
中文摘要
人们正在做出相当大的努力来生长各种半导体和其他类型的材料的受控薄层。在电子器件和光电子器件的制造中,这些都变得越来越重要,并且在未来将看到越来越重要的作用。除了制造层的能力之外,能够在原位,即在层生长的同时写入图案将是有利的。这项建议解决了与这种图案相关的问题。
英文摘要
Considerable effort is being made to grow controlled thin layers of a variety of semiconductors and other type of materials. These have been of increasing importance in the fabrication of both electronic devices and optoelectronic devices and will see increasing importance in the future. Along with the ability to fabricate the layers it would be advantageous to be able to write patterns in situ, that is while the layers are being grown. This proposal addresses problems associated with such patterning.
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