Ion-Beam Enhanced Deposition of High Tc Superconducting ThinFilms

高温超导薄膜的离子束增强沉积

• 批准号: 8718132
• 负责人: Charles Fleddermann
• 金额: $ 5万
• 依托单位: University of New Mexico
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-11-01 至 1989-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8718132&HistoricalAwards=false
• 关键词: Ion; Beam; Enhanced; Deposition; Tc

This proposal deals with a study of the use of beam-enhanced deposition techniques in the growth of high temperature superconducting thin films on a variety of substrates. Argon or oxygen ions from a Kaufman ion source will be directed onto the surface of a YBa2Cu3Ox thin-film during deposition by sputtering, low pressure CVD, and PECVD. Studies of this technique on other thin- film systems have demonstrated the capability of ion-beams to alter the properties of deposited films. This work aims at having a positive impact on the technology of high-temperature superconductor thin-film growth by using ion-beams to significantly alter film qualities, increase the incorporation of oxygen into the growing films, and possibly improve the annealing requirements for these materials.

本方案研究了在不同衬底上生长高温超导薄膜的束流增强沉积技术。在溅射、低压CVD和PECVD沉积过程中，来自考夫曼离子源的Ar离子或氧离子将被引导到YBa2Cu3Ox薄膜的表面。在其他薄膜系统上对这项技术的研究已经证明了离子束能够改变沉积薄膜的性质。这项工作旨在对高温超导薄膜生长技术产生积极的影响，利用离子束显著改变薄膜的质量，增加氧在薄膜中的掺入，并可能改善对这些材料的退火要求。