Infrared Laser Specroscopy of Radicals: A Diagnostic for Etching/Deposition Plasmas

自由基的红外激光光谱：蚀刻/沉积等离子体的诊断

• 批准号: 8801302
• 负责人: Marianne Begemann
• 金额: $ 18.59万
• 依托单位: Vassar College
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-07-15 至 1991-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8801302&HistoricalAwards=false
• 关键词: Infrared; Laser; Specroscopy; Radicals; Diagnostic

This RUI project is in the general area of analytical and surface chemistry and in the subfield of plasma diagnostics. Radio frequency and direct current plasmas in silane and halogenated gases are used extensively for etching and depositing thin films on semiconductors. The understanding, control, and optimization of these processes requires non-intrusive in situ diagnostic probes. In this research activity, infrared absorption spectroscopy will be used to provide complementary information to more commonly used diagnostic techniques such as laser induced fluorescence and optical emission spectroscopy for the characterization of transient polyatomic radical species typically present in these technologically important plasmas. The energies of the infrared absorptions will be used to identify the species present and the corresponding intensities of the absorptions will be used to determine their concentrations. Data obtained from these experiments will be used to model chemical events within the plasmas that are of importance to surface etching and deposition processes as well as to combustion chemistry. To achieve the goals of this research, a tunable infrared laser will be used to measure the high resolution spectra of significant plasma-generated radicals such as SiF3, SiCl2, SiH2, HSiF, and Si2H4. Initially the radicals will be generated in a radio frequency or direct current plasma contained in a multipass cell. Frequency, Zeeman, and concentration modulation will be employed to improve the minimum detectability and to differentiate the radical spectra from those of stable molecules. Following analysis of the spectra, a plasma reactor that simulates the conditions encountered in the manufacture of semiconductor devices will be built and the radical concentrations, spatial distributions, and rotational, vibrational, and translational temperatures will be measured as functions of external plasma parameters. These measurements should then enable the development of a model for the chemical reactions that take place in these plasmas and should also establish infrared absorption spectroscopy as a powerful plasma diagnostic.

这个RUI项目位于分析和表面化学的一般领域以及血浆诊断的子场。 硅烷和卤素气体中的射频和直流等离子体广泛用于在半导体上蚀刻和沉积薄膜。 这些过程的理解，控制和优化需要非侵入性的原位诊断探针。 在这项研究活动中，红外吸收光谱将用于向更常用的诊断技术提供互补信息，例如激光诱导的荧光和光学发射光谱，以表征这些技术重要等离子体中通常存在的瞬态多原子性自由基物种。 红外吸收的能量将用于识别存在的物种，并将使用相应的吸收强度来确定其浓度。 从这些实验中获得的数据将用于在等离子体中建模化学事件，这些化学事件对于表面蚀刻和沉积过程以及燃烧化学非常重要。 为了实现这项研究的目标，将使用可调的红外激光来测量诸如SIF3，SIF3，SICL2，SIH2，HSIF和SI2H4之类的显着等离子体生成的自由基的高分辨率光谱。 最初，自由基将以射频或多通单元中包含的直流等离子体的形式生成。 频率，zeeman和浓度调制将用于提高最小可检测性，并将自由基与稳定分子的谱分化。 在对光谱进行分析之后，将建立一个模拟半导体设备中遇到的条件的血浆反应器，并将将自由基浓度，空间分布以及旋转，振动和平移温度测量作为外部等离子体参数的功能。 然后，这些测量值应能够开发出在这些等离子体中发生的化学反应的模型，还应建立红外吸收光谱作为强大的等离子体诊断。