ROW: (Research Initiation) Characterization and Optimization of Ultrathin Silicon Oxynitrides Formed by Ion Implantation

ROW：（研究启动）离子注入形成的超薄氮氧化硅的表征和优化

• 批准号: 8810579
• 负责人: Tina Stacy
• 金额: $ 7.04万
• 依托单位: Villanova University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-07-01 至 1990-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8810579&HistoricalAwards=false
• 关键词: ROW; Research; Initiation; Characterization; Optimization

The objective of the proposed research is characterization of ultrathin (150A) silicon nitride and oxynitride insulators formed by high dosage, low energy (5 keV) implantation of nitrogen or nitrogen and oxygen into single crystal silicon. Samples will be evaluated with measurements of junction capacitance and conductance (as functions of voltage and frequency), current vs. voltage, ellipsometry, Auger electron spectroscopy (AES), accelerated life testing, and electrical stressing and breakdown. Use of a temporary mercury contact will permit evaluation of the insulator alone, including variations of implantation and annealing conditions; and evaluation of films with various metals as gate contacts. Computer controlled measurements will permit extensive data acquisition and analysis.

拟议研究的目的是表征通过高剂量、低能量（5 keV）将氮或氮和氧注入单晶硅而形成的超薄（150A）氮化硅和氮氧化物绝缘体。 将通过结电容和电导（作为电压和频率的函数）、电流与电压、椭圆光度法、俄歇电子能谱 (AES)、加速寿命测试以及电应力和击穿的测量来评估样品。 使用临时汞接触将允许单独评估绝缘体，包括注入和退火条件的变化；以及以各种金属作为栅极接触的薄膜的评估。 计算机控制的测量将允许广泛的数据采集和分析。