ROW: (Research Initiation) Characterization and Optimization of Ultrathin Silicon Oxynitrides Formed by Ion Implantation

本研究的目的是表征高剂量、低能量（5 keV）注入氮或氮氧混合注入单晶硅形成的超薄（150A）氮化硅和氮化氧绝缘子。样品将通过测量结电容和电导（作为电压和频率的函数）、电流与电压、椭圆偏振、俄歇电子能谱（AES）、加速寿命测试、电应力和击穿来评估。使用临时汞接触将允许单独评估绝缘体，包括植入和退火条件的变化；以及各种金属作为栅极触点的薄膜的评价。计算机控制的测量将允许广泛的数据采集和分析。

The objective of the proposed research is characterization of ultrathin (150A) silicon nitride and oxynitride insulators formed by high dosage, low energy (5 keV) implantation of nitrogen or nitrogen and oxygen into single crystal silicon. Samples will be evaluated with measurements of junction capacitance and conductance (as functions of voltage and frequency), current vs. voltage, ellipsometry, Auger electron spectroscopy (AES), accelerated life testing, and electrical stressing and breakdown. Use of a temporary mercury contact will permit evaluation of the insulator alone, including variations of implantation and annealing conditions; and evaluation of films with various metals as gate contacts. Computer controlled measurements will permit extensive data acquisition and analysis.