Processing of Metals and Semiconductors with Emphasis on theRole of Surfaces, Interfaces, and Grain Boundaries

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This research project is directed in two major thrust areas (i) processing of metal alloys and (ii) processing of semiconductor materials. A component connecting both of these areas is simulation and theory work aimed at predicting materials properties. The metal processing research employs ion beam mixing, shock consolidation, mechanical alloying, and synthesis of layered and metastable materials. The semiconductor processing research employs epitaxial growth on Si and GaAs, ion implantation, nucleation and growth on new phases such as amorphous carbon. The use of sophisticated electron microscopy apparatus is central to the research projects. Better understanding of the influence of interfaces, surfaces and grain boundaries on materials properties is a primary goal of this reserach.