Presidential Young Investigator Award: High Speed Optoelectronic Devices and VLSI Structures by Laser Enhanced Epitaxy

总统青年研究员奖：激光增强外延高速光电器件和 VLSI 结构

• 批准号: 8858352
• 负责人: Sanjay Banerjee
• 金额: $ 31.2万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-08-01 至 1994-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8858352&HistoricalAwards=false
• 关键词: Presidential; Young; Investigator; Award; Speed

This program will focus on low temperature, photo-enhanced chemical vapor deposition techniques to achieve single crystal epitaxy. Non- selective photo-excitation using a low pressure mercury lamp, as well as selective epitaxy using an ArF excimer laser will be used coupled with rapid thermal processing using incoherent arc lamps to rapidly adjust the substrate temperature during growth. Two materials systems to be studied using this growth technique include silicon N- i-P-i doping superlattices and Si-SixGe1-x strained layer superlattices/pseudomorphic layers. These systems will be examined from the viewpoint of novel device applications. They are, respectively, electroptic modulation using the tunable bandgap properties of N-i-P-i superlattices and the possibility of obtaining direct bandgap superlattices using a combination of Brillouin zone folding and lattice strain in the Si-SixGe1-x strained layer system. We believe a photo-enhanced CVD technique has significant potential advantages over competing growth techniques. It does not require ultra high vacuum conditions as in MBE. It allows selective excitation of precursor species, allowing better crystalline quality with less contamination than plasma-CVD. Substrate temperatures can be lowered compared to MOCVD. In conclusion, excellent heterostructures with abrupt interfaces and doping profiles should be achievable by photo-enhanced CVD to allow novel device applications using compositional and doping superlattices.

该计划将侧重于低温，光增强化学 气相沉积技术来实现单晶外延。 非 也可以使用低压汞灯进行选择性光激发 因为使用ArF受激准分子激光器的选择性外延将被用于耦合 利用非相干弧光灯的快速热处理， 在生长期间调节衬底温度。 两种材料 使用这种生长技术研究的系统包括硅N- i-P-i掺杂超晶格和Si-SixGe 1-x应变层 超晶格/赝晶层。 这些系统将被检查 从新颖器件应用的观点来看。 是的， 利用可调带隙的电光调制 N-i-P-i超晶格的性质和获得 使用布里渊区组合的直接带隙超晶格 Si-SixGe 1-x应变层系统中的折叠和晶格应变。 我们相信光增强CVD技术具有巨大的潜力 竞争性增长技术的优势。 它不需要 如MBE中的超高真空条件。 它允许选择性 前体物质的激发，允许更好的结晶质量 比等离子CVD污染更少。 衬底温度可以 比MOCVD低。 总而言之， 具有突变界面和掺杂分布的异质结构应该 可通过光增强CVD实现以允许新的器件应用 使用组合和掺杂超晶格。