A Large Signal Nonlinear Circuit Model for Compound Semiconductor Field Effect Transistors

复合半导体场效应晶体管的大信号非线性电路模型

• 批准号: 8861316
• 负责人: Harold Grubin
• 金额: $ 5万
• 依托单位: Scientific Research Associates Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-01-01 至 1989-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8861316&HistoricalAwards=false
• 关键词: Large; Signal; Nonlinear; Circuit; Model

During the past decade there has been an increase in the design and complexity of compound semiconductor devices and systems. For these devices and systems to operate effectively, robust device and system designs are needed. Unfortunately in the case of gallium arsenide devices, design engineers use workstation tools that describe the complex conduction paths within devices by highly approximate algorithms that are limited in their predictive abilities. The principle Phase I research objectives are: (1) to utilize the SRA physically based drift and diffusion equation algorithm to develop parameters allowing an equivalent circuit representation of gallium arsenide field effect transistors to be used in nonlinear device circuit analysis for large signals at high frequency. (2) Use the nonlienar circuit differential equations in the design of a power FET, and verify the design using the drift and diffusion equations. (3) Couple the SRA generated nonlinear circuit differential equations to a general circuit algorithm, in this case the Harmonic Balance Method. The innovative feature of SRA's Phase I approach is to obtain the coefficients for the nonlinear circuit representation of a compound semiconductor from the solutions to the nonlinear governing partial differential equations. Success in this program would create a device/circuit design tool useable by a broad range of design engineers that is applicable to GaAs and other modern semiconductor materials. Under the Phase I program the design tool shall be implemented for the problem of designing high power gallium arsenide FETs. Under the Phase II part of the program the drift and diffusion code and the Harmonic Balance Method circuit analysis will be put into a workstation with a user interface that circuit and device designers can use.

在过去的十年中，设计和 化合物半导体器件和系统的复杂性。 为这些 设备和系统有效地运行，稳健的设备和系统 设计是必须的。 不幸的是在砷化镓的情况下 设备，设计工程师使用工作站工具， 器件内的复杂传导路径， 预测能力有限的算法。 第一阶段的主要研究目标是：（1）利用SRA 基于物理的漂移和扩散方程算法， 允许镓的等效电路表示的参数 用于非线性器件的砷化物场效应晶体管 高频大信号的电路分析。 (2)使用 非线性电路微分方程在功率FET设计中， 并使用漂移和扩散方程验证设计。 （三） 将SRA生成的非线性电路微分方程耦合到 一般电路算法，在这种情况下，谐波平衡法。 SRA第一阶段方法的创新特点是获得 化合物的非线性电路表示的系数 半导体的非线性控制偏微分方程的解 微分方程 这项计划的成功将创造一个 可用于广泛设计的器件/电路设计工具 适用于GaAs和其他现代半导体的工程师 材料. 根据第一阶段计划，设计工具应 针对高功率砷化镓的设计问题， 场效应晶体管。 根据第二阶段的计划部分漂移和扩散 代码和谐波平衡法电路分析将投入 具有用户界面的工作站，电路和器件设计人员 可以使用.