Precipitation and Defect Formation Processes in Oxygen Implanted Silicon-on-Insulator Material

本研究的目的是了解高剂量氧离子注入硅制备的绝缘体上硅材料的工艺参数与结构变化机理之间的关系。这项研究使用了透射电子显微镜技术来研究埋在氧化层之上的薄的“浅”硅层中结构的发展。使用各种注入和热处理处理试件，以允许后续形成微观结构的变化。对沉淀和沉淀诱导的缺陷形成的热激活过程的模拟是基于体硅模型，该模型针对离子注入、高氧浓度和高缺陷密度的损伤的影响进行了修正。这项研究对于理解氧的影响、辐射损伤和离子注入硅的机理具有重要意义。

The purpose of the research is to understand the relationships between processing parameters and mechanisms of structural change in silicon-on-insulator material synthesized by high-dose oxygen implantation into silicon. The research uses transmission electron microscopy techniques to study the development of structure in thin "superficial" silicon layers above the buried oxide layer. Specimens are processed using a variety of implantation and thermal treatments to allow following of the formation of the microstructural changes. Modelling for thermally activated processes of precipitation and precipitate- induced defect formation is based on bulk silicon models modified for effects of damage from ion implantation, high oxygen concentration, and high defect density. The research is relevant to understanding of the effects of oxygen, radiation damage, and mechanisms of ion implantation in silicon.