Precipitation and Defect Formation Processes in Oxygen Implanted Silicon-on-Insulator Material

氧注入绝缘体上硅材料中的沉淀和缺陷形成过程

• 批准号: 8901370
• 负责人: Stephen Krause
• 金额: $ 32.9万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-02-01 至 1993-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8901370&HistoricalAwards=false
• 关键词: Precipitation; Defect; Formation; Processes; Oxygen

The purpose of the research is to understand the relationships between processing parameters and mechanisms of structural change in silicon-on-insulator material synthesized by high-dose oxygen implantation into silicon. The research uses transmission electron microscopy techniques to study the development of structure in thin "superficial" silicon layers above the buried oxide layer. Specimens are processed using a variety of implantation and thermal treatments to allow following of the formation of the microstructural changes. Modelling for thermally activated processes of precipitation and precipitate- induced defect formation is based on bulk silicon models modified for effects of damage from ion implantation, high oxygen concentration, and high defect density. The research is relevant to understanding of the effects of oxygen, radiation damage, and mechanisms of ion implantation in silicon.

研究的目的是了解 工艺参数和机理之间的关系 在通过以下方法合成绝缘体上硅材料中的结构变化 高剂量氧注入硅。 研究采用 透射电子显微镜技术来研究 薄“表面”硅层结构的发展 在掩埋氧化物层上方。 样本处理使用 各种植入和热处理， 微观结构变化的形成。 建模 沉淀和沉淀的热活化过程- 诱导缺陷的形成是基于体硅模型修改 对于离子注入、高氧 浓度和高缺陷密度。 这项研究有助于了解 氧、辐射损伤和离子注入机制 硅。