RIA: Two-Terminal Monolithic Solid-State Devices for Milli- meter-Wave and Submillimeter-Wave Circuit Applications

RIA：用于毫米波和亚毫米波电路应用的两端单片固态器件

• 批准号: 8909318
• 负责人: David Klemer
• 金额: $ 6.91万
• 依托单位: University of Texas at Arlington
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-09-01 至 1992-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8909318&HistoricalAwards=false
• 关键词: RIA; Two; Terminal; Monolithic; Solid

The proposed research concerns the fabrication of two-terminal millimeter-wave diode structures and incorporation of those devices into monolithic millimeter-wave circuits in the frequency ranges 40-60 GHz and 90-100 GHz. The focus of the research will concern primarily the circuit design aspects and will begin by measuring and characterizing a single gallium arsenide (GaAs) Schottky diode mounted in a 40-60 GHz finline test fixture. After de-embedding the measurements to a reference plane at the diode chip, an accurate circuit model will be developed to permit the design of an integrated Schottky diode phase modulator fabricated in a finline environment on GaAs. Characterization of the resulting circuit will allow appropriate matching structures to be designed and incorporated into the circuit. An experimental scaling of the design to 90-100 GHz will form the second half of the project; the 90-100 GHz design procedure will parallel the approach used in the 40-60 GHz band. This research will form a basis for more sophisticated two- and three-terminal integrated-circuit design at higher millimeter-wave and submillimeter- wave frequencies.

拟议的研究涉及双端的制造 毫米波二极管结构和这些器件的结合 单片毫米波电路的频率范围为40-60 GHz和90-100 GHz。 研究的重点将主要涉及 电路设计方面，并将开始通过测量和 表征单个砷化镓（GaAs）肖特基二极管， 在40-60 GHz鳍线测试夹具中。 在解嵌入之后， 测量到二极管芯片处的参考平面， 电路模型将被开发，以允许一个集成的设计 肖特基二极管相位调制器在鳍线环境下的制造 砷化镓。 所得到的电路的特性将允许 适当的匹配结构将被设计和纳入 电路。 将设计的实验缩放到90-100 GHz将 90-100 GHz的设计程序 将与40-60 GHz频段中使用的方法并行。 本研究 将为更复杂的二端和三端 更高毫米波和亚毫米波集成电路设计， 波的频率