RIA: Two-Terminal Monolithic Solid-State Devices for Milli- meter-Wave and Submillimeter-Wave Circuit Applications

拟议的研究涉及制造两端毫米波二极管结构，并将这些器件集成到频率范围为40-60 GHz和90-100 GHz的单片毫米波电路中。研究的重点将主要涉及电路设计方面，并将从测量和表征安装在40-60 GHz鳍线测试夹具中的单个砷化镓(GaAs)肖特基二极管开始。在将测量数据解嵌入到二极管芯片的参考面之后，将建立精确的电路模型，以允许设计在鳍线环境下在GaAs上制造的集成肖特基二极管相位调制器。所得到的电路的特性将允许设计适当的匹配结构并将其结合到电路中。设计到90-100 GHz的试验性扩展将形成项目的后半部分；90-100 GHz的设计程序将与40-60 GHz频段使用的方法平行。这项研究将为在更高的毫米波和亚毫米波频率下进行更复杂的二端和三端集成电路设计奠定基础。

The proposed research concerns the fabrication of two-terminal millimeter-wave diode structures and incorporation of those devices into monolithic millimeter-wave circuits in the frequency ranges 40-60 GHz and 90-100 GHz. The focus of the research will concern primarily the circuit design aspects and will begin by measuring and characterizing a single gallium arsenide (GaAs) Schottky diode mounted in a 40-60 GHz finline test fixture. After de-embedding the measurements to a reference plane at the diode chip, an accurate circuit model will be developed to permit the design of an integrated Schottky diode phase modulator fabricated in a finline environment on GaAs. Characterization of the resulting circuit will allow appropriate matching structures to be designed and incorporated into the circuit. An experimental scaling of the design to 90-100 GHz will form the second half of the project; the 90-100 GHz design procedure will parallel the approach used in the 40-60 GHz band. This research will form a basis for more sophisticated two- and three-terminal integrated-circuit design at higher millimeter-wave and submillimeter- wave frequencies.