Industry/University Cooperative Research Fellowship

产学合作研究奖学金

• 批准号: 8913491
• 负责人: David Klemer
• 金额: $ 0.94万
• 依托单位: University of Texas at Arlington
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-07-01 至 1990-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8913491&HistoricalAwards=false
• 关键词: Industry; University; Cooperative; Research; Fellowship

This grant funds an Industry/University Cooperative Research Fellowship to allow the principal investigator to work with two industry researchers during the summer. The recent development of sophisticated instrumentation has allowed for the direct characterization of microwave and millimeter-wave devices from on-wafer measurements, eliminating the need for complex test fixtures and the uncertainty that these fixtures introduce into microwave measurements. Wafer-probing stations used in conjunction with standard microwave network analyzers allow for direct determination of device S-parameters without extensive de-embedding procedures, thus achieving accuracies heretofore impossible. Such wafer-probing equipment has steadily increased in operating frequency, attaining state- of-the-art measurement bandwidths of 50 GHz. The current interest in monolithic microwave integrated circuits (MMICs) and the inherent benefits associated with this technology -- reduced fabrication costs, increased reliability, decreased circuit size and weight, and control of unwanted parasitic effects -- have provided the incentive for development of advanced measurement techniques. Accurate device models developed from direct on-wafer measurements will allow for the predictable design of monolithic integrated circuits to higher microwave and millimeter-wave frequencies. In particular, careful modeling of the GaAs MESFET has received recent attention in the technical literature. As a key active element in the design of monolithic circuits for microwave applications, an accurate MESFET model is essential in advanced MMIC design. FET modeling from on-wafer measurements and verification of the accuracy of these models from independent measurements forms the focus of the proposed work. The principal investigator is qualified to conduct this research and a grant of $9,355 for 6 months is recommended.

该基金将设立一个产学研合作奖学金，让首席研究员在夏季与两名产学研人员合作。精密仪器的最新发展已经允许直接表征微波和毫米波器件的晶圆测量，消除了复杂的测试夹具的需要和这些夹具引入微波测量的不确定性。与标准微波网络分析仪一起使用的晶圆探测站允许直接确定器件s参数，而无需广泛的去嵌入程序，从而达到迄今为止不可能实现的精度。这种晶圆探测设备的工作频率稳步增加，达到了50 GHz的最先进的测量带宽。目前对单片微波集成电路（mmic）的兴趣以及与该技术相关的固有优势-降低制造成本，提高可靠性，减小电路尺寸和重量，以及控制不必要的寄生效应-为先进测量技术的发展提供了动力。从直接晶圆上测量开发的精确器件模型将允许可预测的单片集成电路设计到更高的微波和毫米波频率。特别是，GaAs MESFET的仔细建模最近在技术文献中受到了关注。作为微波单片电路设计中的关键有源元件，精确的MESFET模型在先进的MMIC设计中至关重要。从晶圆上测量的FET建模和从独立测量中验证这些模型的准确性形成了提出的工作的重点。首席研究员有资格进行这项研究，并建议获得为期6个月的9,355美元的资助。