Semiconductor-Substrate Engineering: Chemical Vapor Deposition of New Source Materials

研究的发展分为四个阶段。介绍了与多晶或非晶衬底结合的半导体薄膜材料。首先，新的化学气相沉积（CVD）源材料用于沉积III。开发砷化镓、磷化铟、砷化镓铝等半导体薄膜。在理论计算的帮助下，这些新的源材料将被设计成显示CVD的增强特性。每一个新的源材料将合成，分离，纯化和表征使用标准的化学技术。其次，将对第一阶段制备的新源材料在CVD工艺中的应用进行评估。光解、热解和电子。辅助沉积技术将首先研究从每种新源化合物形成所需薄膜材料的方法。每个化合物的分解（破碎）热力学也将使用电子冲击质谱（通过使用外观电位计算）进行研究。第三，将开展单晶GaAs、InP和AlxGa1的研究。xAs将通过石墨外延和CVD技术的结合沉积在非晶或多晶陶瓷衬底上。最后，将尝试在陶瓷上沉积适当材料的图案化薄膜。支持三世。V半导体展示这些新材料在器件技术和工程中的潜在应用。该研究对改进微电子和光电子器件的制造和操作具有重要意义。

Four stages of research in the development of III.V semiconducting thin film materials bonded to polycrystalline or amorphous substrates are presented. First, new chemical vapor deposition (CVD) source materials for the deposition of III.V semiconducting thin films, such as gallium arsenide, indium phosphide and aluminum gallium arsenide, will be developed. These new source materials will be designed to display enhanced properties for CVD with the aid of theoretical calculations. Each new source materials will be synthesized, isolated, purified and characterized using standard chemical techniques. Second, the new source materials prepared in the first stage will be evaluated for use in CVD processes. Photolytic, pyrolytic and electron.assisted deposition techniques will be initially investigated for the formation of desired thin film materials from each new source compound. The decomposition (fragmentation) thermodynamics for each compound will also be studied using electron impact mass spectroscopy (through the use of appearance potential calculations). Third, studies will be initiated in which monocrystalline GaAs,InP and AlxGa1.xAs will be deposited on amorphous or polycrystalline ceramic substrates using a combination of graphoepitaxial and CVD techniques. Finally, attempts will be made to deposit patterned thin films of an appropriate material on the ceramic.supported III.V semiconductor to demonstrate potential application of these new materials to device technology and engineering. This research has important implications for the improved fabrication and operation of both microelectronic and optoelectronic devices.