Semiconductor-Substrate Engineering: Chemical Vapor Deposition of New Source Materials

半导体衬底工程：新原材料的化学气相沉积

• 批准号: 8909793
• 负责人: James Spencer
• 金额: $ 7万
• 依托单位: Syracuse University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-09-01 至 1991-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8909793&HistoricalAwards=false
• 关键词: Semiconductor; Substrate; Engineering; Chemical; Vapor

Four stages of research in the development of III.V semiconducting thin film materials bonded to polycrystalline or amorphous substrates are presented. First, new chemical vapor deposition (CVD) source materials for the deposition of III.V semiconducting thin films, such as gallium arsenide, indium phosphide and aluminum gallium arsenide, will be developed. These new source materials will be designed to display enhanced properties for CVD with the aid of theoretical calculations. Each new source materials will be synthesized, isolated, purified and characterized using standard chemical techniques. Second, the new source materials prepared in the first stage will be evaluated for use in CVD processes. Photolytic, pyrolytic and electron.assisted deposition techniques will be initially investigated for the formation of desired thin film materials from each new source compound. The decomposition (fragmentation) thermodynamics for each compound will also be studied using electron impact mass spectroscopy (through the use of appearance potential calculations). Third, studies will be initiated in which monocrystalline GaAs,InP and AlxGa1.xAs will be deposited on amorphous or polycrystalline ceramic substrates using a combination of graphoepitaxial and CVD techniques. Finally, attempts will be made to deposit patterned thin films of an appropriate material on the ceramic.supported III.V semiconductor to demonstrate potential application of these new materials to device technology and engineering. This research has important implications for the improved fabrication and operation of both microelectronic and optoelectronic devices.

Ⅲ、Ⅴ族半导体发展的四个研究阶段 与多晶或非晶结合的薄膜材料 提供了基质。 第一，新型化学气相沉积 (CVD)用于沉积III.V半导体的源材料 薄膜，例如砷化镓、磷化铟和铝 砷化镓将被开发。 这些新的原始材料 将被设计为显示增强的CVD性能， 借助理论计算。 每个新的源材料将 合成、分离、纯化并使用标准品进行表征 化学技术 第二，编写的新的源材料， 第一阶段将被评估用于CVD工艺。 光解、热解和电子辅助沉积技术 将初步研究形成所需的薄 每种新化合物的薄膜材料。 分解 （碎片）热力学为每一个化合物也将是 研究使用电子碰撞质谱（通过使用 的外观潜力计算）。第三，研究将 开始，其中单晶GaAs，InP和AlxGa1.xAs将被 沉积在非晶或多晶陶瓷基底上， 图形外延和CVD技术的组合。最后， 将尝试存款具有图案的薄膜， 在陶瓷支撑的III.V半导体上的适当材料 展示这些新材料的潜在应用， 设备技术和工程。 这项研究具有重要意义 对改进制造和操作的影响， 微电子和光电器件。