Semiconductor-Substrate Engineering: Chemical Vapor Deposition of New Source Materials

介绍了粘结在多晶或非晶衬底上的III.V半导体薄膜材料发展的四个阶段的研究。首先，将开发用于沉积III.V半导体薄膜的新的化学气相沉积(CVD)源材料，如砷化镓、磷化铟和铝砷化镓。这些新的源材料将被设计成在理论计算的辅助下显示出增强的CVD性能。每一种新的来源材料都将使用标准的化学技术进行合成、分离、提纯和表征。第二，将对第一阶段准备的新来源材料进行用于化学气相沉积工艺的评估。将初步研究光解、热解和电子辅助沉积技术，以便从每一种新的源化合物中形成所需的薄膜材料。每种化合物的分解(碎裂)热力学也将使用电子撞击质谱学(通过使用出现势计算)进行研究。第三，将采用化学气相沉积和化学气相外延相结合的方法，在非晶或多晶陶瓷衬底上沉积单晶GaAs、InP和AlxGa1.xAs。最后，将尝试在陶瓷支撑的III.V半导体上沉积合适材料的图案化薄膜，以展示这些新材料在器件技术和工程中的潜在应用。该研究对微电子器件和光电子器件的制备和操作的改进都具有重要的意义。

Four stages of research in the development of III.V semiconducting thin film materials bonded to polycrystalline or amorphous substrates are presented. First, new chemical vapor deposition (CVD) source materials for the deposition of III.V semiconducting thin films, such as gallium arsenide, indium phosphide and aluminum gallium arsenide, will be developed. These new source materials will be designed to display enhanced properties for CVD with the aid of theoretical calculations. Each new source materials will be synthesized, isolated, purified and characterized using standard chemical techniques. Second, the new source materials prepared in the first stage will be evaluated for use in CVD processes. Photolytic, pyrolytic and electron.assisted deposition techniques will be initially investigated for the formation of desired thin film materials from each new source compound. The decomposition (fragmentation) thermodynamics for each compound will also be studied using electron impact mass spectroscopy (through the use of appearance potential calculations). Third, studies will be initiated in which monocrystalline GaAs,InP and AlxGa1.xAs will be deposited on amorphous or polycrystalline ceramic substrates using a combination of graphoepitaxial and CVD techniques. Finally, attempts will be made to deposit patterned thin films of an appropriate material on the ceramic.supported III.V semiconductor to demonstrate potential application of these new materials to device technology and engineering. This research has important implications for the improved fabrication and operation of both microelectronic and optoelectronic devices.