Semiconductor-Substrate Engineering: Chemical Vapor Deposition of New Source Materials

半导体衬底工程：新原材料的化学气相沉积

• 批准号: 8909793
• 负责人: James Spencer
• 金额: $ 7万
• 依托单位: Syracuse University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-09-01 至 1991-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8909793&HistoricalAwards=false
• 关键词: Semiconductor; Substrate; Engineering; Chemical; Vapor

Four stages of research in the development of III.V semiconducting thin film materials bonded to polycrystalline or amorphous substrates are presented. First, new chemical vapor deposition (CVD) source materials for the deposition of III.V semiconducting thin films, such as gallium arsenide, indium phosphide and aluminum gallium arsenide, will be developed. These new source materials will be designed to display enhanced properties for CVD with the aid of theoretical calculations. Each new source materials will be synthesized, isolated, purified and characterized using standard chemical techniques. Second, the new source materials prepared in the first stage will be evaluated for use in CVD processes. Photolytic, pyrolytic and electron.assisted deposition techniques will be initially investigated for the formation of desired thin film materials from each new source compound. The decomposition (fragmentation) thermodynamics for each compound will also be studied using electron impact mass spectroscopy (through the use of appearance potential calculations). Third, studies will be initiated in which monocrystalline GaAs,InP and AlxGa1.xAs will be deposited on amorphous or polycrystalline ceramic substrates using a combination of graphoepitaxial and CVD techniques. Finally, attempts will be made to deposit patterned thin films of an appropriate material on the ceramic.supported III.V semiconductor to demonstrate potential application of these new materials to device technology and engineering. This research has important implications for the improved fabrication and operation of both microelectronic and optoelectronic devices.

提出了III.V半导体的薄膜材料的四个阶段。 首先，将开发出新的化学蒸气沉积（CVD）源材料，用于III.V半导体薄膜的沉积，例如砷化衣，磷化磷脂和砷化铝铝铝。 这些新的原始材料将旨在借助理论计算显示CVD的增强属性。 每种新的材料将使用标准化学技术合成，隔离，纯化和表征。 其次，将评估在第一阶段制备的新来源材料用于CVD过程。 最初将研究光解，热解和电子。 还将使用电子冲击质谱（通过使用外观潜在计算）来研究每种化合物的分解（碎片）热力学。第三，将开始研究单晶GAA，INP和Alxga1.XAS将使用绘图上皮上和CVD技术的组合沉积在非晶或多晶陶瓷底物上。最后，将尝试在陶瓷上存放适当材料的图案薄膜。支持的III.V半导体，以证明这些新材料在设备技术和工程上的潜在应用。 这项研究对改善微电子和光电设备的制造和运行具有重要意义。