U.S.-Japan Joint Seminar: High Resolution Focused Ion Beams/December 1990/Portland, OR

美日联合研讨会：高分辨率聚焦离子束/1990 年 12 月/俄勒冈州波特兰

• 批准号: 8915316
• 负责人: Jon Orloff
• 金额: --
• 依托单位: Oregon Graduate Institute of Science & Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-06-01 至 1991-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8915316&HistoricalAwards=false
• 关键词: U.S.; Japan; Joint; Seminar; Resolution

This award will support ten U.S. participants in a joint U.S.- Japan seminar on the subject of high resolution focused ion beams (FIB), a field which has developed primarily in the United States and Japan. FIB technology has been applied to integrated circuit fabrication, mask repair, and surface analysis. It has potential applications in low-energy implantation during molecular beam epitaxy and in nanostructure fabrication. Focused ion beams produced with field-ionization- type sources can have large current densities with small beam sizes. Such beams can be used to alter surfaces in a variety of ways, including micromachining, implantation, and deposition. The applications of focused ion beams to integrated circuit fabrication include (1) direct, maskless, resistless implantation of dopants in Si or GaAs, (2) micromachining or ion milling, (3) ion beam lithography, (4) ion-assisted etching or deposition, (5) microanalysis, and (6) scanning ion microscopy. Because of the significant technological promise of the field, as well as its potential application to the study of basic scientific problems in electronic materials, the seminar organizers believe the time is opportune for the convening of this workshop. It will bring many of the main workers in FIB together to exchange and discuss their recent research results and to consider possible joint research projects. The directions of research in FIB technology are somewhat different in the U.S. and Japan, and the seminar will thus allow workers from complementary areas in the two countries to compare results. Both the U.S. and Japan should benefit from such an exchange. A particular effort will be made to ensure attendance by U.S. graduate students. Though there will be some discussion of ion sources and optics at the seminar, the emphasis will be on the novel applications possible only with high resolution focused ion beams. The seminar will be held December 3-6, 1990, in Portland, Oregon. Seminar co-organizers are Dr. Jon Orloff, Oregon Graduate Institute of Science and Technology, and Dr. Kenji Gamo, Department of Electrical Engineering, Osaka University, Japan.

该奖项将支持参加美日联合研讨会的10名美国参与者，研讨会的主题是高分辨率聚焦离子束(FIB)，该领域主要在美国和日本开发。FIB技术已被应用于集成电路制造、掩模修复和表面分析。它在分子束外延过程中的低能注入和纳米结构的制备中具有潜在的应用前景。用场电离类型的源产生的聚焦离子束可以具有大的电流密度和小的束流尺寸。这种光束可以用来以各种方式改变表面，包括微加工、注入和沉积。聚焦离子束在集成电路制造中的应用包括：(1)直接、无掩膜、无阻挡地注入掺杂到硅或砷化镓中；(2)微加工或离子研磨；(3)离子束光刻；(4)离子辅助刻蚀或沉积；(5)微分析；(6)扫描离子显微镜。由于该领域的重大技术前景，以及它在电子材料基础科学问题研究中的潜在应用，研讨会组织者认为召开这次研讨会的时机是合适的。它将把FIB的许多主要工作人员聚集在一起，交流和讨论他们最近的研究成果，并考虑可能的联合研究项目。在美国和日本，FIB技术的研究方向略有不同，因此，研讨会将允许来自两国互补领域的工作人员比较结果。美国和日本都应该从这样的交流中受益。将特别努力确保美国研究生的出勤率。尽管研讨会上将讨论离子源和光学，但重点将放在只有高分辨率聚焦离子束才能实现的新应用上。研讨会将于1990年12月3日至6日在俄勒冈州波特兰举行。研讨会的共同组织者是俄勒冈州科学技术研究生院的Jon Orloff博士和日本大阪大学电机系的Kenji Gamo博士。