Computational Studies of Carrier Transport in Semiconductors with Ultrasmall Scales

本研究计划的目的是研究 载流子输运现象的基本原理 在具有超小空间的半导体器件中， 和/或时间尺度通过发展 新的和先进的数字技术。 总 将调查的研究领域包括： 第一章 发展一个三- 维蒙特卡罗装置 模拟器 （二） 一个算法的发展， 材料和器件模拟， 是基于占领的概念 概率流和转移率 矩阵 这些新的、先进的方法有望在 更强大，更详细，更完整， 传统的模拟器，并可以提供重要的 技术和工具来研究一些 承运人运输的基本问题，如 各向异性效应、非稳态输运和 量子力学现象 一旦 配方是完整的，每种方法将 应用于分析各种运输问题， 材料和器件结构， 可以充分利用每种方法的优点， 演示。 在这项工作中发展起来的知识 对设计至关重要 新型电子器件的优化和可行性研究 和光电器件，其不断减少的 尺寸使传统的模拟技术 问题更多，价值下降。

The objective of this research program is to study the underlying principles of carrier transport phenomena in semiconductor devices with ultrasmall spatial and/or temporal scales through the development of new and advanced numerical techniques. The general areas of research to be investigated are: 1) The development of a three- dimensional Monte Carlo device simulator. 2) The development of an algorithm for materials and device simulation which is based on the concept of occupation probability flux and the transition rate matrix. The new and advanced methods are expected t be more powerful, detailed and complete than conventional simulators, and can provide important techniques and tools to study some of the fundamental questions in carrier transport, such as anisotropy effects, non-stationary transport and quantum mechanical phenomena. Once the formulations are complete, each method will be applied to analyze various transport problems in materials and device structures through which the advantages of each method can be fully utilized and demonstrated. The knowledge developed in this work will be of crucial importance to the design optimization and feasibility study of novel electronic and optoelectronic devices, whose ever-decreasing dimensions render conventional simulation techniques more problematic and of declining value.