Topological Insulator Hybrid Structures for Novel Optoelectronic Applications

用于新型光电应用的拓扑绝缘体混合结构

基本信息

  • 批准号:
    1306400
  • 负责人:
  • 金额:
    $ 42万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2013
  • 资助国家:
    美国
  • 起止时间:
    2013-08-15 至 2018-01-31
  • 项目状态:
    已结题

项目摘要

Objective: The objective of this program is to exploit unique advantages of topological insulator based structures for optoelectronic applications. Specifically, the strong magnetoelectric interaction at the topological insulator-magnetic material interface and subsequent band engineering is the key focus as they can facilitate tailored response to an optical signal, offering an ideal environment for previously unattainable performances such as extreme sensitivity detection. The combined theoretical and experimental effort aims to achieve synthesis, fabrication, and analysis of novel topological insulator materials and layered heterostructures as well as demonstration of superior device functionalities.Intellectual Merit: The intellectual merit is that the investigation presents a basis for realizable topological insulator based devices beyond the current state-of-the art. Through the paradigm of domain matching epitaxy, the effort pursues synthesis of epitaxial topological insulator/ferromagnetic insulator hybrid structures with atomistic uniformity at the interface on a silicon compatible platform. The target materials include both Bi2Se3 and emerging cubic candidates such as inverse perovskite Sr3SnO and half-Heusler LuPtSb. The investigation also develops fundamental theoretical understanding of topological insulator properties and photo-response characteristics of various terahertz detector designs.Broader Impacts: The broader impacts are the education/training of graduate and undergraduate students in addition to advanced device development with technological importance. Of particular significance is participation and recruiting of minority students by fostering strong ties to local historically black colleges and universities. The outreach is also pursued through ASM Materials Camp, a successful annual summer event for high school students, as well as the online distance education network.This project is jointly funded by the Electronics, Photonics, and Magnetic Devices Program (EPMD) in the Division of Electrical, Communications and Cyber Systems (ECCS) and by the Electronic and Photonic Materials Program (EPM) in the Division of Materials Research (DMR).
目的:该计划的目的是利用基于拓扑绝缘体的结构在光电子应用中的独特优势。具体而言,拓扑绝缘体-磁性材料界面处的强磁电相互作用和随后的能带工程是关键焦点,因为它们可以促进对光信号的定制响应,为以前无法实现的性能提供理想的环境,例如极端灵敏度检测。理论和实验相结合的努力旨在实现新型拓扑绝缘体材料和分层异质结构的合成、制造和分析,以及上级器件功能的演示。知识上的优点是,该研究为超越当前技术水平的可实现的基于拓扑绝缘体的器件提供了基础。通过域匹配外延的范例,该努力追求在硅兼容平台上的界面处具有原子均匀性的外延拓扑绝缘体/铁磁绝缘体混合结构的合成。 靶材料包括Bi 2Se 3和新兴的立方候选物,如反钙钛矿Sr 3SnO和半Heusler LuPtSb。调查还开发了拓扑绝缘体属性和各种太赫兹探测器designs.Broader影响的光响应特性的基本理论认识:更广泛的影响是研究生和本科生的教育/培训,除了先进的设备开发与技术的重要性。 特别重要的是,通过与当地历史悠久的黑人学院和大学建立密切联系,参与和招收少数民族学生。 该项目由电气、通信和网络系统部(ECCS)的电子、光子和磁性器件项目(EPMD)和材料研究部(DMR)的电子和光子材料项目(EPM)共同资助。

项目成果

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专利数量(0)

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Ki Wook Kim其他文献

Early-life factors contributing to type 1 diabetes
  • DOI:
    10.1007/s00125-019-4942-x
  • 发表时间:
    2019-08-27
  • 期刊:
  • 影响因子:
    10.200
  • 作者:
    Maria E. Craig;Ki Wook Kim;Sonia R. Isaacs;Megan A. Penno;Emma E. Hamilton-Williams;Jennifer J. Couper;William D. Rawlinson
  • 通讯作者:
    William D. Rawlinson
QoS Translation and Admission Control for MPEG Video
MPEG 视频的 QoS 转换和准入控制
  • DOI:
    10.1007/978-0-387-35170-4_40
  • 发表时间:
    1997
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Ki Wook Kim;K. Nahrstedt
  • 通讯作者:
    K. Nahrstedt
The variation of hydrophobicity of aluminum alloy by nitrogen and argon ion implantation
氮、氩离子注入对铝合金疏水性的影响
  • DOI:
    10.1007/s00231-014-1424-z
  • 发表时间:
    2014
  • 期刊:
  • 影响因子:
    2.2
  • 作者:
    S. Do;Ki Wook Kim;J. Jeong
  • 通讯作者:
    J. Jeong
Circulation of enterovirus D68 (EV-D68) causing respiratory illness in New South Wales, Australia, between August 2018 and November 2019.
2018 年 8 月至 2019 年 11 月期间,肠道病毒 D68 (EV-D68) 在澳大利亚新南威尔士州传播,导致呼吸道疾病。
  • DOI:
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    S. Stelzer;M. Yeang;P. Britton;Ki Wook Kim;H. Varadhan;P. Andrews;R. Briest;J. Branley;R. Balgahom;R. Burrell;N. Gehrig;James P. Newcombe;A. Kesson;J. Kok;M. Maley;S. V. van Hal;C. MacIntyre;M. Craig;M. Ferson;W. Rawlinson
  • 通讯作者:
    W. Rawlinson
An optically driven quantum dot quantum computer
光驱动量子点量子计算机

Ki Wook Kim的其他文献

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{{ truncateString('Ki Wook Kim', 18)}}的其他基金

QMHP: Exploring the Limits of Energy Scavenging - from Microwave to Nanoscale
QMHP:探索能量清除的极限 - 从微波到纳米尺度
  • 批准号:
    0801408
  • 财政年份:
    2008
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Carrier Spin Dynamics and Device Applications in Carbon Nanotube
碳纳米管中的载流子自旋动力学和器件应用
  • 批准号:
    0621776
  • 财政年份:
    2006
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Coherent Nanotechnology Quantum Devices for Information Processing
用于信息处理的相干纳米技术量子设备
  • 批准号:
    0084487
  • 财政年份:
    2000
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
SGER: Exploratory Research for New Concepts in Nanoscale Devices
SGER:纳米器件新概念的探索性研究
  • 批准号:
    9910692
  • 财政年份:
    1999
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Computational Studies of Carrier Transport in Semiconductors with Ultrasmall Scales
超小尺度半导体中载流子输运的计算研究
  • 批准号:
    8917727
  • 财政年份:
    1990
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant

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EAGER: Quantum Manufacturing: Monolithic integration of telecommunication-band quantum emitters in the 4H-SiC-on-insulator platform
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Superconductor-(Metal)-Insulator Transitions: Understanding the Emergence of Metallic States, A Continuation Proposal
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Exploring Emergent Magnetic Topological States in Three-Dimensional Magnetic Topological Insulator Multilayers
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