X-Pinch X-Ray Source for Microlithography (REU SUPPLEMENT)

用于微光刻的 X-Pinch X 射线源（REU 补充）

• 批准号: 8919960
• 负责人: David Hammer
• 金额: $ 3.78万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-08-15 至 1992-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8919960&HistoricalAwards=false
• 关键词: Pinch; Ray; Source; Microlithography; REU

The X-pinch x-ray source driven by a pulsed power generator may be capable of exposing a resist on a complete 4 cm by 4 cm wafer in a single submicrosecond pulse. This source consists of a 2 fine aluminum (Al) wires stretched between the output electrodes of the power source so as to touch at a single point in the form of an X. Typically 500 J of 1.6 keV (7.8 A) Al K-shell radiation was obtained from a 0.5 mm region at the point of contact of the two wires when a 4 ns, 500 kA current pulse was passed through them. Experiments will be carried out to determine the resolution and correct exposure conditions for this source on a resist, to minimize the power pulse required for a few hundred Joule yield, to try magnesium and carbon in order to obtain a longer wavelength source, and to improve the pulse-to-pulse reproducibility.

脉冲功率驱动的X箍缩X射线源 发生器可以能够将抗蚀剂暴露在 在单个亚微秒内完成4 cm × 4 cm晶片 脉搏了 此源由2细铝 (Al)在输出电极之间伸展的导线 电源，以便在表单中的单个点处接触 一个X。 通常为500 J的1.6 keV（7.8 A）Al K壳层 辐射是从0.5毫米的区域获得的， 4 ns，500 kA时两条导线的接触点 电流脉冲通过它们。 实验将 进行确定分辨率和校正 该源在抗蚀剂上的曝光条件， 最大限度地减少几百个所需的功率脉冲， 焦耳产额，尝试镁和碳， 获得更长波长的光源，并改善 脉冲间再现性。