Third International Conference on Amorphous and Crystalline Silicon Carbide April 12-13, l990.

霍华德大学将主办并与 圣克拉拉大学第三国际 非晶硅和晶体硅会议 碳化物及相关材料 它遵循 在霍华德成功举办第一届和第二届廉政公署会议， Santa Clara大学 主 赞助者是国家科学基金会， 海军研究办公室和IEEE华盛顿 第节-电子器件组。 本次大会将 汇集了美国和外国的杰出人士 研究人员在增长，表征， 晶体和非晶SiC器件的制造 及相关材料。 这些工人将出席 他们目前的研究和交流新的想法， 解决当前问题的各种办法 宽带隙器件和电路的实现。

Howard University will host and jointly organize with Santa Clara University Third International Conference on Amorphous and Crystalline Silicon Carbide and Related Materials. It follows the successful first and second ICACSC at Howard and Santa Clara Universities respectively. The primary sponsors are the National Science Foundation, The Office of Naval Research, and IEEE Washington Section-Electron Device Group. This conference will bring together distinguished American and foreign researchers in the growth, characterization, and fabrication of crystalline and amorphous SIC devices and related materials. These workers will present their current research and exchange new ideas on various approaches to current problems in the realization of wide bandgap devices and circuits.